MMBT2369LT1
- Mfr.Part #
- MMBT2369LT1
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS SS GP NPN 15V SOT23
- Stock
- 22,640
- In Stock :
- 22,640
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Power Dissipation :
- 300mW
- Max Collector Current :
- 200mA
- Polarity/Channel Type :
- NPN
- Pbfree Code :
- yes
- Mounting Type :
- Surface Mount
- Length :
- 2.9mm
- Base Part Number :
- MMBT2369
- Collector Emitter Breakdown Voltage :
- 15V
- Pin Count :
- 3
- Operating Temperature :
- -55°C~150°C TJ
- Number of Pins :
- 3
- Contact Plating :
- Tin
- Collector Emitter Saturation Voltage :
- 250mV
- Lead Free :
- Lead Free
- REACH SVHC :
- No SVHC
- Voltage - Rated DC :
- 15V
- Emitter Base Voltage (VEBO) :
- 4.5V
- Power - Max :
- 225mW
- Peak Reflow Temperature (Cel) :
- 260
- Radiation Hardening :
- No
- ECCN Code :
- EAR99
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Power Dissipation :
- 300mW
- Number of Elements :
- 1
- Surface Mount :
- yes
- RoHS Status :
- ROHS3 Compliant
- Element Configuration :
- Single
- Terminal Form :
- Gull wing
- Packaging :
- Tape and Reel (TR)
- hFE Min :
- 40
- Max Breakdown Voltage :
- 15V
- Number of Terminations :
- 3
- Collector Emitter Voltage (VCEO) :
- 15V
- Transistor Application :
- SWITCHING
- Width :
- 1.3mm
- JESD-609 Code :
- e3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 10mA 350mV
- Transistor Type :
- NPN
- Current - Collector Cutoff (Max) :
- 400nA
- Terminal Position :
- Dual
- Factory Lead Time :
- 10 Weeks
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Collector Base Voltage (VCBO) :
- 40V
- Height :
- 940μm
- Current Rating :
- 200mA
- Transistor Element Material :
- SILICON
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Published :
- 2004
- Transition Frequency :
- 500MHz
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Weight :
- 4.535924g
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 1mA, 10mA
- Datasheets
- MMBT2369LT1

NPN -55°C~150°C TJ 400nA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
MMBT2369LT1G Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 40 @ 10mA 350mV DC current gain.As it features a collector emitter saturation voltage of 250mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 4.5V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 500MHz in the part.Single BJT transistor can be broken down at a voltage of 15V volts.When collector current reaches its maximum, it can reach 200mA volts.
MMBT2369LT1G Features
the DC current gain for this device is 40 @ 10mA 350mV
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 1mA, 10mA
the emitter base voltage is kept at 4.5V
the current rating of this device is 200mA
a transition frequency of 500MHz
MMBT2369LT1G Applications
There are a lot of ON Semiconductor
MMBT2369LT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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