MMBT2369ALT1
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- Mfr.Part #
- MMBT2369ALT1
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS SS GP NPN 15V SOT23
- Stock
- 2,933
- In Stock ：
- 2,933
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Factory Lead Time :
- 10 Weeks
- Max Collector Current :
- 200mA
- Number of Terminations :
- 3
- Surface Mount :
- yes
- Lead Free :
- Lead Free
- Length :
- 2.9mm
- Transistor Type :
- NPN
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Packaging :
- Tape and Reel (TR)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Elements :
- 1
- Contact Plating :
- Tin
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 10mA, 100mA
- Height :
- 940μm
- Pbfree Code :
- yes
- Max Power Dissipation :
- 225mW
- Terminal Form :
- Gull wing
- Pin Count :
- 3
- ECCN Code :
- EAR99
- Number of Pins :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20 @ 100mA 1V
- Termination :
- SMD/SMT
- Transition Frequency :
- 500MHz
- Published :
- 2005
- Voltage - Rated DC :
- 15V
- Max Breakdown Voltage :
- 15V
- Transistor Element Material :
- SILICON
- Time@Peak Reflow Temperature-Max (s) :
- 40
- REACH SVHC :
- No SVHC
- hFE Min :
- 40
- Mounting Type :
- Surface Mount
- Terminal Position :
- Dual
- Collector Base Voltage (VCBO) :
- 40V
- JESD-609 Code :
- e3
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Saturation Voltage :
- 500mV
- Polarity/Channel Type :
- NPN
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Current - Collector Cutoff (Max) :
- 400nA
- Power Dissipation :
- 300mW
- Radiation Hardening :
- No
- Collector Emitter Voltage (VCEO) :
- 15V
- Emitter Base Voltage (VEBO) :
- 4.5V
- Operating Temperature :
- -55°C~150°C TJ
- Collector Emitter Breakdown Voltage :
- 15V
- Current Rating :
- 200mA
- Element Configuration :
- Single
- Width :
- 1.3mm
- Peak Reflow Temperature (Cel) :
- 260
- Base Part Number :
- MMBT2369A
- Transistor Application :
- SWITCHING
- Datasheets
- MMBT2369ALT1
NPN -55°C~150°C TJ 400nA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
MMBT2369ALT1G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 20 @ 100mA 1V.With a collector emitter saturation voltage of 500mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 10mA, 100mA.If the emitter base voltage is kept at 4.5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 200mA.A transition frequency of 500MHz is present in the part.There is a breakdown input voltage of 15V volts that it can take.Collector current can be as low as 200mA volts at its maximum.
MMBT2369ALT1G Features
the DC current gain for this device is 20 @ 100mA 1V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 10mA, 100mA
the emitter base voltage is kept at 4.5V
the current rating of this device is 200mA
a transition frequency of 500MHz
MMBT2369ALT1G Applications
There are a lot of ON Semiconductor
MMBT2369ALT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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