MMBT2369
- Mfr.Part #
- MMBT2369
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 15V 0.2A SOT23-3
- Stock
- 82,765
- In Stock :
- 82,765
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mounting Type :
- Surface Mount
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 10mA 1V
- Number of Terminations :
- 3
- Transistor Element Material :
- SILICON
- Mount :
- Surface Mount
- RoHS Status :
- RoHS Compliant
- Published :
- 2013
- Terminal Finish :
- Tin (Sn)
- hFE Min :
- 40
- Polarity/Channel Type :
- NPN
- Transistor Application :
- SWITCHING
- REACH SVHC :
- No SVHC
- Power Dissipation :
- 350mW
- Height :
- 6.35mm
- Weight :
- 30mg
- Element Configuration :
- Single
- Collector Emitter Saturation Voltage :
- 250mV
- Termination :
- SMD/SMT
- Radiation Hardening :
- No
- Lead Free :
- Lead Free
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 1mA, 10mA
- Operating Temperature :
- -55°C~150°C TJ
- Collector Base Voltage (VCBO) :
- 40V
- Current - Collector Cutoff (Max) :
- 30μA ICBO
- Collector Emitter Breakdown Voltage :
- 15V
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 4 days ago)
- Current Rating :
- 200mA
- Length :
- 6.35mm
- Max Breakdown Voltage :
- 15V
- Transition Frequency :
- 500MHz
- Collector Emitter Voltage (VCEO) :
- 15V
- Pbfree Code :
- yes
- Emitter Base Voltage (VEBO) :
- 4.5V
- Terminal Form :
- Gull wing
- Max Collector Current :
- 200mA
- Transistor Type :
- NPN
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Number of Pins :
- 3
- Max Power Dissipation :
- 350mW
- Base Part Number :
- MMBT2369
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- Terminal Position :
- Dual
- Voltage - Rated DC :
- 15V
- Packaging :
- Tape and Reel (TR)
- JESD-609 Code :
- e3
- Width :
- 6.35mm
- Number of Elements :
- 1
- Datasheets
- MMBT2369

NPN -55°C~150°C TJ 30μA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
MMBT2369 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 40 @ 10mA 1V.The collector emitter saturation voltage is 250mV, which allows for maximum design flexibility.When VCE saturation is 250mV @ 1mA, 10mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 4.5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 200mA.In the part, the transition frequency is 500MHz.This device can take an input voltage of 15V volts before it breaks down.A maximum collector current of 200mA volts can be achieved.
MMBT2369 Features
the DC current gain for this device is 40 @ 10mA 1V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 1mA, 10mA
the emitter base voltage is kept at 4.5V
the current rating of this device is 200mA
a transition frequency of 500MHz
MMBT2369 Applications
There are a lot of ON Semiconductor
MMBT2369 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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