MMBT2222LT3G
- Mfr.Part #
- MMBT2222LT3G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 30V 0.6A SOT23-3
- Stock
- 17,755
- In Stock :
- 17,755
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Operating Temperature :
- -55°C~150°C TJ
- Surface Mount :
- yes
- Terminal Finish :
- MATTE TIN
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 10V
- Current - Collector (Ic) (Max) :
- 600mA
- Mounting Type :
- Surface Mount
- Polarity/Channel Type :
- NPN
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Number of Terminations :
- 3
- Terminal Form :
- Gull wing
- Pbfree Code :
- yes
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transition Frequency :
- 250MHz
- Transistor Element Material :
- SILICON
- JESD-30 Code :
- R-PDSO-G3
- Packaging :
- Tape and Reel (TR)
- Transistor Application :
- SWITCHING
- Peak Reflow Temperature (Cel) :
- 260
- Current - Collector Cutoff (Max) :
- 10nA ICBO
- Configuration :
- Single
- Turn On Time-Max (ton) :
- 35ns
- Vce Saturation (Max) @ Ib, Ic :
- 1.6V @ 50mA, 500mA
- Frequency - Transition :
- 250MHz
- Turn Off Time-Max (toff) :
- 285ns
- Voltage - Collector Emitter Breakdown (Max) :
- 30V
- Number of Elements :
- 1
- Terminal Position :
- Dual
- Transistor Type :
- NPN
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- JESD-609 Code :
- e3
- Pin Count :
- 3
- Qualification Status :
- COMMERCIAL
- RoHS Status :
- ROHS3 Compliant
- Power - Max :
- 300mW
- Datasheets
- MMBT2222LT3G

NPN -55°C~150°C TJ 10nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
MMBT2222LT3G Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 150mA 10V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1.6V @ 50mA, 500mA.The part has a transition frequency of 250MHz.Device displays Collector Emitter Breakdown (30V maximal voltage).
MMBT2222LT3G Features
the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 1.6V @ 50mA, 500mA
a transition frequency of 250MHz
MMBT2222LT3G Applications
There are a lot of Rochester Electronics, LLC
MMBT2222LT3G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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