MMBT2222LT1

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Packaging :

Tape and Reel (TR)

Base Part Number :

MMBT2222

Package / Case :

TO-236-3, SC-59, SOT-23-3

Time@Peak Reflow Temperature-Max (s) :

40

Termination :

SMD/SMT

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 150mA 10V

Surface Mount :

yes

Max Breakdown Voltage :

30V

Width :

2.64mm

Weight :

4.535924g

hFE Min :

100

Number of Terminations :

3

Collector Emitter Saturation Voltage :

1.6V

Lead Free :

Lead Free

Turn Off Time-Max (toff) :

285ns

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Published :

2004

ECCN Code :

EAR99

Collector Emitter Breakdown Voltage :

30V

Polarity/Channel Type :

NPN

Power Dissipation :

300mW

Transistor Type :

NPN

Pbfree Code :

yes

Terminal Form :

Gull wing

Collector Base Voltage (VCBO) :

60V

Length :

3.04mm

Element Configuration :

Single

Peak Reflow Temperature (Cel) :

260

Factory Lead Time :

8 Weeks

Current Rating :

600mA

Transition Frequency :

250MHz

Max Collector Current :

600mA

Collector Emitter Voltage (VCEO) :

30V

Terminal Position :

Dual

Voltage - Rated DC :

30V

REACH SVHC :

No SVHC

Emitter Base Voltage (VEBO) :

5V

Contact Plating :

Tin

JESD-609 Code :

e3

Gain Bandwidth Product :

250MHz

Pin Count :

3

Frequency :

250MHz

Number of Pins :

3

Transistor Application :

SWITCHING

Vce Saturation (Max) @ Ib, Ic :

1.6V @ 50mA, 500mA

Current - Collector Cutoff (Max) :

10nA ICBO

Mounting Type :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Radiation Hardening :

No

Height :

1.11mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Power Dissipation :

225mW