MMBT2222ATT3G
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- Mfr.Part #
- MMBT2222ATT3G
- Manufacturer
- onsemi
- Package / Case
- SC-75, SOT-416
- Datasheet
- Download
- Description
- TRANS NPN 40V 0.6A SC75 SOT416
- Stock
- 13,273
- In Stock ：
- 13,273
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Emitter Base Voltage (VEBO) :
- 6V
- Package / Case :
- SC-75, SOT-416
- Surface Mount :
- yes
- Pbfree Code :
- yes
- RoHS Status :
- ROHS3 Compliant
- Polarity/Channel Type :
- NPN
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 10V
- Power Dissipation :
- 150mW
- Collector Base Voltage (VCBO) :
- 75V
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- Number of Pins :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Turn Off Time-Max (toff) :
- 285ns
- Terminal Form :
- Gull wing
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Finish :
- Tin (Sn)
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 50mA, 500mA
- Published :
- 2005
- Collector Emitter Voltage (VCEO) :
- 40V
- Element Configuration :
- Single
- Transistor Type :
- NPN
- Base Part Number :
- MMBT2222A
- Number of Terminations :
- 3
- Number of Elements :
- 1
- Terminal Position :
- Dual
- Transistor Application :
- AMPLIFIER
- hFE Min :
- 35
- Collector Emitter Breakdown Voltage :
- 40V
- Current - Collector Cutoff (Max) :
- 10nA ICBO
- Radiation Hardening :
- No
- Transition Frequency :
- 300MHz
- Max Collector Current :
- 600mA
- Frequency :
- 300MHz
- Packaging :
- Tape and Reel (TR)
- Peak Reflow Temperature (Cel) :
- 260
- Mounting Type :
- Surface Mount
- Lead Free :
- Lead Free
- Max Power Dissipation :
- 150mW
- Collector Emitter Saturation Voltage :
- 1V
- Factory Lead Time :
- 8 Weeks
- ECCN Code :
- EAR99
- Pin Count :
- 3
- JESD-609 Code :
- e3
- Gain Bandwidth Product :
- 300MHz
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Element Material :
- SILICON
- Datasheets
- MMBT2222ATT3G
NPN -55°C~150°C TJ 10nA ICBO 1 Elements 3 Terminations SILICON NPN SC-75, SOT-416 Tape & Reel (TR) Surface Mount
MMBT2222ATT3G Overview
In this device, the DC current gain is 100 @ 150mA 10V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1V @ 50mA, 500mA.With the emitter base voltage set at 6V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 300MHz.Single BJT transistor is possible for the collector current to fall as low as 600mA volts at Single BJT transistors maximum.
MMBT2222ATT3G Features
the DC current gain for this device is 100 @ 150mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 6V
a transition frequency of 300MHz
MMBT2222ATT3G Applications
There are a lot of ON Semiconductor
MMBT2222ATT3G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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