MMBT2222ATT3G
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- Mfr.Part #
- MMBT2222ATT3G
- Manufacturer
- onsemi
- Package / Case
- SC-75, SOT-416
- Datasheet
- Download
- Description
- TRANS NPN 40V 0.6A SC75 SOT416
- Stock
- 13,273
- In Stock ：
- 13,273
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Operating Temperature :
- -55°C~150°C TJ
- Number of Terminations :
- 3
- Gain Bandwidth Product :
- 300MHz
- Pin Count :
- 3
- Number of Pins :
- 3
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Surface Mount
- Surface Mount :
- yes
- Radiation Hardening :
- No
- Max Power Dissipation :
- 150mW
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- Collector Emitter Voltage (VCEO) :
- 40V
- Base Part Number :
- MMBT2222A
- Transistor Type :
- NPN
- Pbfree Code :
- yes
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 10V
- Collector Emitter Breakdown Voltage :
- 40V
- Turn Off Time-Max (toff) :
- 285ns
- JESD-609 Code :
- e3
- Terminal Position :
- Dual
- Package / Case :
- SC-75, SOT-416
- Collector Emitter Saturation Voltage :
- 1V
- Number of Elements :
- 1
- hFE Min :
- 35
- Transistor Element Material :
- SILICON
- Element Configuration :
- Single
- Published :
- 2005
- Emitter Base Voltage (VEBO) :
- 6V
- Terminal Finish :
- Tin (Sn)
- Collector Base Voltage (VCBO) :
- 75V
- Factory Lead Time :
- 8 Weeks
- Transistor Application :
- AMPLIFIER
- Packaging :
- Tape and Reel (TR)
- Frequency :
- 300MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Time@Peak Reflow Temperature-Max (s) :
- 40
- ECCN Code :
- EAR99
- Transition Frequency :
- 300MHz
- Lead Free :
- Lead Free
- Current - Collector Cutoff (Max) :
- 10nA ICBO
- Terminal Form :
- Gull wing
- Polarity/Channel Type :
- NPN
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 50mA, 500mA
- Peak Reflow Temperature (Cel) :
- 260
- Max Collector Current :
- 600mA
- Power Dissipation :
- 150mW
- Datasheets
- MMBT2222ATT3G
MMBT2222ATT3G Documents
NPN -55°C~150°C TJ 10nA ICBO 1 Elements 3 Terminations SILICON NPN SC-75, SOT-416 Tape & Reel (TR) Surface Mount
MMBT2222ATT3G Overview
In this device, the DC current gain is 100 @ 150mA 10V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1V @ 50mA, 500mA.With the emitter base voltage set at 6V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 300MHz.Single BJT transistor is possible for the collector current to fall as low as 600mA volts at Single BJT transistors maximum.
MMBT2222ATT3G Features
the DC current gain for this device is 100 @ 150mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 6V
a transition frequency of 300MHz
MMBT2222ATT3G Applications
There are a lot of ON Semiconductor
MMBT2222ATT3G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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