MMBT2222ATT1G
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- Mfr.Part #
- MMBT2222ATT1G
- Manufacturer
- onsemi
- Package / Case
- SC-75, SOT-416
- Datasheet
- Download
- Description
- TRANS NPN 40V 0.6A SC75 SOT416
- Stock
- 54,406
- In Stock ：
- 54,406
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Power Dissipation :
- 150mW
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Transition Frequency :
- 300MHz
- Factory Lead Time :
- 8 Weeks
- Number of Terminations :
- 3
- Radiation Hardening :
- No
- JESD-609 Code :
- e3
- Terminal Form :
- Gull wing
- Polarity/Channel Type :
- NPN
- Published :
- 2002
- Transistor Application :
- AMPLIFIER
- Contact Plating :
- Tin
- Collector Base Voltage (VCBO) :
- 75V
- Terminal Position :
- Dual
- Base Part Number :
- MMBT2222A
- Pin Count :
- 3
- Max Collector Current :
- 600mA
- Number of Pins :
- 3
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Saturation Voltage :
- 1V
- Frequency :
- 300MHz
- Packaging :
- Tape and Reel (TR)
- REACH SVHC :
- No SVHC
- Operating Temperature :
- -55°C~150°C TJ
- Pbfree Code :
- yes
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 50mA, 500mA
- Number of Elements :
- 1
- Emitter Base Voltage (VEBO) :
- 6V
- hFE Min :
- 35
- Power Dissipation :
- 150mW
- Gain Bandwidth Product :
- 300MHz
- Length :
- 1.65mm
- Collector Emitter Voltage (VCEO) :
- 40V
- Mounting Type :
- Surface Mount
- Width :
- 900μm
- Peak Reflow Temperature (Cel) :
- 260
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Transistor Type :
- NPN
- Max Breakdown Voltage :
- 40V
- Turn Off Time-Max (toff) :
- 285ns
- ECCN Code :
- EAR99
- Collector Emitter Breakdown Voltage :
- 40V
- Lead Free :
- Lead Free
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 10V
- Surface Mount :
- yes
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current Rating :
- 600mA
- Package / Case :
- SC-75, SOT-416
- Transistor Element Material :
- SILICON
- Element Configuration :
- Single
- Height :
- 800μm
- Voltage - Rated DC :
- 75V
- Datasheets
- MMBT2222ATT1G
NPN -55°C~150°C TJ 1 Elements 3 Terminations SILICON NPN SC-75, SOT-416 Tape & Reel (TR) Surface Mount
MMBT2222ATT1G Overview
DC current gain in this device equals 100 @ 150mA 10V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 1V, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1V @ 50mA, 500mA.An emitter's base voltage can be kept at 6V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 600mA current rating.As a result, the part has a transition frequency of 300MHz.Breakdown input voltage is 40V volts.In extreme cases, the collector current can be as low as 600mA volts.
MMBT2222ATT1G Features
the DC current gain for this device is 100 @ 150mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 6V
the current rating of this device is 600mA
a transition frequency of 300MHz
MMBT2222ATT1G Applications
There are a lot of ON Semiconductor
MMBT2222ATT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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