MMBT2222ATT1
- Mfr.Part #
- MMBT2222ATT1
- Manufacturer
- onsemi
- Package / Case
- SC-75, SOT-416
- Datasheet
- Download
- Description
- TRANS NPN GP 75V 600MA SC-75
- Stock
- 29,738
- In Stock :
- 29,738
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Elements :
- 1
- RoHS Status :
- ROHS3 Compliant
- Current Rating :
- 600mA
- Operating Temperature :
- -55°C~150°C TJ
- Element Configuration :
- Single
- Lead Free :
- Lead Free
- Length :
- 1.65mm
- Peak Reflow Temperature (Cel) :
- 260
- Mounting Type :
- Surface Mount
- Pbfree Code :
- yes
- ECCN Code :
- EAR99
- Collector Base Voltage (VCBO) :
- 75V
- Max Power Dissipation :
- 150mW
- Frequency :
- 300MHz
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Width :
- 900μm
- Collector Emitter Breakdown Voltage :
- 40V
- Terminal Form :
- Gull wing
- Collector Emitter Voltage (VCEO) :
- 40V
- Radiation Hardening :
- No
- REACH SVHC :
- No SVHC
- Factory Lead Time :
- 8 Weeks
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Base Part Number :
- MMBT2222A
- Height :
- 800μm
- Contact Plating :
- Tin
- Pin Count :
- 3
- Collector Emitter Saturation Voltage :
- 1V
- Turn Off Time-Max (toff) :
- 285ns
- Transistor Type :
- NPN
- Max Collector Current :
- 600mA
- Emitter Base Voltage (VEBO) :
- 6V
- Transistor Application :
- AMPLIFIER
- Max Breakdown Voltage :
- 40V
- Packaging :
- Tape and Reel (TR)
- Surface Mount :
- yes
- Number of Pins :
- 3
- Package / Case :
- SC-75, SOT-416
- Voltage - Rated DC :
- 75V
- Gain Bandwidth Product :
- 300MHz
- Terminal Position :
- Dual
- Polarity/Channel Type :
- NPN
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Published :
- 2002
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 50mA, 500mA
- Number of Terminations :
- 3
- Transition Frequency :
- 300MHz
- Transistor Element Material :
- SILICON
- hFE Min :
- 35
- Power Dissipation :
- 150mW
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 10V
- JESD-609 Code :
- e3
- Datasheets
- MMBT2222ATT1
NPN -55°C~150°C TJ 1 Elements 3 Terminations SILICON NPN SC-75, SOT-416 Tape & Reel (TR) Surface Mount
MMBT2222ATT1G Overview
DC current gain in this device equals 100 @ 150mA 10V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 1V, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1V @ 50mA, 500mA.An emitter's base voltage can be kept at 6V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 600mA current rating.As a result, the part has a transition frequency of 300MHz.Breakdown input voltage is 40V volts.In extreme cases, the collector current can be as low as 600mA volts.
MMBT2222ATT1G Features
the DC current gain for this device is 100 @ 150mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 6V
the current rating of this device is 600mA
a transition frequency of 300MHz
MMBT2222ATT1G Applications
There are a lot of ON Semiconductor
MMBT2222ATT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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