MMBT2222ATT1

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Mfr.Part #
MMBT2222ATT1
Manufacturer
onsemi
Package / Case
SC-75, SOT-416
Datasheet
Download
Description
TRANS NPN GP 75V 600MA SC-75
Stock
29,738
In Stock :
29,738

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Number of Elements :
1
RoHS Status :
ROHS3 Compliant
Current Rating :
600mA
Operating Temperature :
-55°C~150°C TJ
Element Configuration :
Single
Lead Free :
Lead Free
Length :
1.65mm
Peak Reflow Temperature (Cel) :
260
Mounting Type :
Surface Mount
Pbfree Code :
yes
ECCN Code :
EAR99
Collector Base Voltage (VCBO) :
75V
Max Power Dissipation :
150mW
Frequency :
300MHz
Lifecycle Status :
ACTIVE (Last Updated: 4 days ago)
Width :
900μm
Collector Emitter Breakdown Voltage :
40V
Terminal Form :
Gull wing
Collector Emitter Voltage (VCEO) :
40V
Radiation Hardening :
No
REACH SVHC :
No SVHC
Factory Lead Time :
8 Weeks
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Base Part Number :
MMBT2222A
Height :
800μm
Contact Plating :
Tin
Pin Count :
3
Collector Emitter Saturation Voltage :
1V
Turn Off Time-Max (toff) :
285ns
Transistor Type :
NPN
Max Collector Current :
600mA
Emitter Base Voltage (VEBO) :
6V
Transistor Application :
AMPLIFIER
Max Breakdown Voltage :
40V
Packaging :
Tape and Reel (TR)
Surface Mount :
yes
Number of Pins :
3
Package / Case :
SC-75, SOT-416
Voltage - Rated DC :
75V
Gain Bandwidth Product :
300MHz
Terminal Position :
Dual
Polarity/Channel Type :
NPN
Time@Peak Reflow Temperature-Max (s) :
40
Published :
2002
Vce Saturation (Max) @ Ib, Ic :
1V @ 50mA, 500mA
Number of Terminations :
3
Transition Frequency :
300MHz
Transistor Element Material :
SILICON
hFE Min :
35
Power Dissipation :
150mW
DC Current Gain (hFE) (Min) @ Ic, Vce :
100 @ 150mA 10V
JESD-609 Code :
e3
Datasheets
MMBT2222ATT1
Introducing Transistors - Bipolar (BJT) - Single onsemi MMBT2222ATT1 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Mounting Type:Surface Mount, Base Part Number:MMBT2222A, Number of Pins:3, Package / Case:SC-75, SOT-416, Number of Terminations:3, MMBT2222ATT1 pinout, MMBT2222ATT1 datasheet PDF, MMBT2222ATT1 amp .Beyond Transistors - Bipolar (BJT) - Single onsemi MMBT2222ATT1 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.



NPN -55°C~150°C TJ 1 Elements 3 Terminations SILICON NPN SC-75, SOT-416 Tape & Reel (TR) Surface Mount

MMBT2222ATT1G Overview


DC current gain in this device equals 100 @ 150mA 10V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 1V, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1V @ 50mA, 500mA.An emitter's base voltage can be kept at 6V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 600mA current rating.As a result, the part has a transition frequency of 300MHz.Breakdown input voltage is 40V volts.In extreme cases, the collector current can be as low as 600mA volts.

MMBT2222ATT1G Features


the DC current gain for this device is 100 @ 150mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 6V
the current rating of this device is 600mA
a transition frequency of 300MHz


MMBT2222ATT1G Applications


There are a lot of ON Semiconductor
MMBT2222ATT1G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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