MMBT2222AT-7
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- Mfr.Part #
- MMBT2222AT-7
- Manufacturer
- Diodes Incorporated
- Package / Case
- SOT-523
- Datasheet
- Download
- Description
- TRANS NPN 40V 0.6A SOT523
- Stock
- 45,716
- In Stock ：
- 45,716
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector Cutoff (Max) :
- 10nA ICBO
- Turn Off Time-Max (toff) :
- 285ns
- Mounting Type :
- Surface Mount
- Weight :
- 2.012816mg
- Package / Case :
- SOT-523
- hFE Min :
- 75
- Continuous Collector Current :
- 600mA
- Transition Frequency :
- 300MHz
- Transistor Type :
- NPN
- Frequency :
- 300MHz
- Width :
- 800μm
- Collector Emitter Breakdown Voltage :
- 40V
- Terminal Position :
- Dual
- Base Part Number :
- MMBT2222A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 10V
- Pbfree Code :
- yes
- Gain Bandwidth Product :
- 300MHz
- Transistor Element Material :
- SILICON
- Mount :
- Surface Mount
- Max Collector Current :
- 600mA
- JESD-609 Code :
- e3
- REACH SVHC :
- No SVHC
- Radiation Hardening :
- No
- Lead Free :
- Lead Free
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Polarity/Channel Type :
- NPN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Series :
- Automotive, AEC-Q101
- Collector Emitter Saturation Voltage :
- 1V
- Max Breakdown Voltage :
- 40V
- Number of Elements :
- 1
- Number of Terminations :
- 3
- Voltage - Rated DC :
- 40V
- Power Dissipation :
- 150mW
- Terminal Finish :
- Matte Tin (Sn)
- Pin Count :
- 3
- Emitter Base Voltage (VEBO) :
- 6V
- Operating Temperature :
- -55°C~150°C TJ
- Terminal Form :
- Gull wing
- Element Configuration :
- Single
- Length :
- 1.6mm
- Published :
- 2007
- Number of Pins :
- 3
- Factory Lead Time :
- 19 Weeks
- Current Rating :
- 600mA
- Collector Base Voltage (VCBO) :
- 75V
- ECCN Code :
- EAR99
- Height :
- 750μm
- Peak Reflow Temperature (Cel) :
- 260
- Packaging :
- Tape and Reel (TR)
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 50mA, 500mA
- Collector Emitter Voltage (VCEO) :
- 40V
- Max Power Dissipation :
- 150mW
- RoHS Status :
- ROHS3 Compliant
- Datasheets
- MMBT2222AT-7
NPN -55°C~150°C TJ 10nA ICBO 1 Elements 3 Terminations SILICON NPN SOT-523 Tape & Reel (TR) Surface Mount
MMBT2222AT-7-F Overview
DC current gain in this device equals 100 @ 150mA 10V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 1V, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1V @ 50mA, 500mA.Single BJT transistor is essential to maintain the continuous collector voltage at 600mA to achieve high efficiency.An emitter's base voltage can be kept at 6V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 600mA current rating.As a result, the part has a transition frequency of 300MHz.Breakdown input voltage is 40V volts.In extreme cases, the collector current can be as low as 600mA volts.
MMBT2222AT-7-F Features
the DC current gain for this device is 100 @ 150mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 6V
the current rating of this device is 600mA
a transition frequency of 300MHz
MMBT2222AT-7-F Applications
There are a lot of Diodes Incorporated
MMBT2222AT-7-F applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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