MMBT2222ALT3G
- Mfr.Part #
- MMBT2222ALT3G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 40V 0.6A SOT23-3
- Stock
- 25,274
- In Stock :
- 25,274
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Width :
- 1.4mm
- Max Operating Temperature :
- 150°C
- Element Configuration :
- Single
- Transistor Type :
- NPN
- Max Collector Current :
- 600mA
- Power - Max :
- 300mW
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 10V
- Max Frequency :
- 100MHz
- Min Operating Temperature :
- -55°C
- Contact Plating :
- Tin
- Factory Lead Time :
- 10 Weeks
- Number of Pins :
- 3
- Radiation Hardening :
- No
- hFE Min :
- 35
- Operating Temperature :
- -55°C~150°C TJ
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 50mA, 500mA
- RoHS Status :
- ROHS3 Compliant
- Gain Bandwidth Product :
- 300MHz
- Length :
- 3.04mm
- Current - Collector Cutoff (Max) :
- 10nA ICBO
- Height :
- 1.01mm
- Frequency :
- 300MHz
- Packaging :
- Tape and Reel (TR)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Polarity :
- NPN
- Frequency - Transition :
- 300MHz
- Base Part Number :
- MMBT2222A
- Current - Collector (Ic) (Max) :
- 600mA
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Max Breakdown Voltage :
- 40V
- Emitter Base Voltage (VEBO) :
- 6V
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Supplier Device Package :
- SOT-23-3 (TO-236)
- Lead Free :
- Lead Free
- Number of Elements :
- 1
- Collector Emitter Voltage (VCEO) :
- 40V
- Voltage - Rated DC :
- 40V
- Current Rating :
- 600mA
- REACH SVHC :
- No SVHC
- Collector Emitter Breakdown Voltage :
- 40V
- Power Dissipation :
- 300mW
- Mounting Type :
- Surface Mount
- Collector Base Voltage (VCBO) :
- 75V
- Max Power Dissipation :
- 225mW
- Voltage - Collector Emitter Breakdown (Max) :
- 40V
- Collector Emitter Saturation Voltage :
- 1V
- Datasheets
- MMBT2222ALT3G

NPN -55°C~150°C TJ 10nA ICBO 1 Elements TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
MMBT2222ALT3G transistor is a bipolar transistor that is controlled through current. In comparison to Field effect transistors, MMBT2222ALT3G bipolar transistors have a slower switching speed and the input impedance is low and power consumption is large. On Semiconductor MMBT2222ALT3G is widely employed in television, broadcasting communications, radar, computers, automatic control devices electronic instruments, household appliances, and many other areas.
MMBT2222ALT3G Features
Low rDS(on) Provides Higher Efficiency and Extends Battery Life
Miniature SC-70/SOT-323 Surface Mount Package Saves Board Space
Pb-Free Package is Available
S and NSV Prefix for Automotive and Other Applications
Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
MMBT2222ALT3G Applications
Television
Broadcasting communications
Radar
Computers
Household appliances
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