MMBT2222ALT1
- Mfr.Part #
- MMBT2222ALT1
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 40V 600MA SOT23-3
- Stock
- 38,270
- In Stock :
- 38,270
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Power Dissipation :
- 225mW
- Operating Temperature :
- -55°C~150°C TJ
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 10V
- Max Power Dissipation :
- 300mW
- Collector Emitter Saturation Voltage :
- 300mV
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Type :
- GENERAL PURPOSE
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pbfree Code :
- yes
- Frequency :
- 300MHz
- hFE Min :
- 100
- Transition Frequency :
- 300MHz
- Pin Count :
- 3
- Gain Bandwidth Product :
- 300MHz
- Max Junction Temperature (Tj) :
- 150°C
- Current Rating :
- 600mA
- Collector Emitter Breakdown Voltage :
- 40V
- Transistor Application :
- SWITCHING
- Transistor Element Material :
- SILICON
- Number of Pins :
- 3
- Factory Lead Time :
- 10 Weeks
- Packaging :
- Tape and Reel (TR)
- Turn Off Time-Max (toff) :
- 285ns
- Number of Elements :
- 1
- REACH SVHC :
- No SVHC
- Length :
- 2.9mm
- Emitter Base Voltage (VEBO) :
- 6V
- Series :
- Automotive, AEC-Q101
- Radiation Hardening :
- No
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 50mA, 500mA
- Lead Free :
- Lead Free
- ECCN Code :
- EAR99
- RoHS Status :
- ROHS3 Compliant
- Lifecycle Status :
- ACTIVE (Last Updated: 6 days ago)
- Width :
- 1.3mm
- JESD-609 Code :
- e3
- Mounting Type :
- Surface Mount
- Collector Base Voltage (VCBO) :
- 75V
- Transistor Type :
- NPN
- Collector Emitter Voltage (VCEO) :
- 40V
- Max Breakdown Voltage :
- 40V
- Terminal Position :
- Dual
- Terminal Form :
- Gull wing
- Base Part Number :
- MMBT2222A
- Max Collector Current :
- 600mA
- Element Configuration :
- Single
- Current - Collector Cutoff (Max) :
- 10nA ICBO
- Contact Plating :
- Tin
- Voltage - Rated DC :
- 40V
- Height :
- 1.11mm
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Peak Reflow Temperature (Cel) :
- 260
- Surface Mount :
- yes
- Published :
- 2006
- Number of Terminations :
- 3
- Datasheets
- MMBT2222ALT1

NPN -55°C~150°C TJ 10nA ICBO 1 Elements 3 Terminations SILICON TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
MMBT2222ALT1G Description
The MMBT2222ALT1G is a bipolar NPN silicon transistor designed for linear, low-power surface mount and switching applications.
MMBT2222ALT1G Features
-
These Devices are Pb?Free, Halogen Free/BFR Free, and are RoHS Compliant
-
S Prefix for Automotive and Other Applications Requiring Unique
-
The site and Control Change Requirements; AEC?Q101 Qualified and
-
PPAP Capable
-
Ideal for Low Power Amplification and Switching
-
Epitaxial Planar Die Construction
MMBT2222ALT1G Applications
-
Driver Modules like Relay Driver, LED driver, etc.
-
Switching loads up to 600mA
-
Motor speed control
-
Inverter and Rectifier circuits
-
Darlington Pair Designs
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