MMBT2222A-7
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- Mfr.Part #
- MMBT2222A-7
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 40V 0.6A SOT23-3
- Stock
- 157,256
- In Stock ：
- 157,256
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- JESD-609 Code :
- e3
- Current :
- 1A
- Peak Reflow Temperature (Cel) :
- 260
- Weight :
- 7.994566mg
- Power - Max :
- 310mW
- Mounting Type :
- Surface Mount
- Max Power Dissipation :
- 300mW
- Transistor Application :
- SWITCHING
- Width :
- 1.4mm
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 50mA, 500mA
- Frequency :
- 300MHz
- Number of Terminations :
- 3
- Operating Temperature :
- -55°C~150°C TJ
- Collector Emitter Saturation Voltage :
- 1V
- ECCN Code :
- EAR99
- Height :
- 1.1mm
- Pin Count :
- 3
- Length :
- 3mm
- Mount :
- Surface Mount
- Pbfree Code :
- yes
- Emitter Base Voltage (VEBO) :
- 6V
- Gain Bandwidth Product :
- 300MHz
- Base Part Number :
- MMBT2222A
- Contact Plating :
- Tin
- REACH SVHC :
- No SVHC
- Voltage :
- 40V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tape and Reel (TR)
- Terminal Form :
- Gull wing
- Transistor Element Material :
- SILICON
- Max Collector Current :
- 600mA
- Number of Pins :
- 3
- RoHS Status :
- ROHS3 Compliant
- Continuous Collector Current :
- 600mA
- Element Configuration :
- Single
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Termination :
- SMD/SMT
- Max Breakdown Voltage :
- 40V
- Polarity/Channel Type :
- NPN
- Collector Base Voltage (VCBO) :
- 75V
- Published :
- 2008
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 10V
- Current Rating :
- 600mA
- Terminal Position :
- Dual
- Transistor Type :
- NPN
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Collector Emitter Breakdown Voltage :
- 40V
- Additional Feature :
- High Reliability
- hFE Min :
- 100
- Transition Frequency :
- 300MHz
- Turn Off Time-Max (toff) :
- 285ns
- Lead Free :
- Lead Free
- Radiation Hardening :
- No
- Series :
- Automotive, AEC-Q101
- Voltage - Rated DC :
- 40V
- Number of Elements :
- 1
- Collector Emitter Voltage (VCEO) :
- 40V
- Factory Lead Time :
- 19 Weeks
- Power Dissipation :
- 350mW
- Current - Collector Cutoff (Max) :
- 10nA ICBO
- Datasheets
- MMBT2222A-7
NPN -55°C~150°C TJ 10nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
MMBT2222A-7-F Description
A compact signal bipolar junction transistor (BJT), the Diodes Incorporated MMBT2222A-7-F is created for usage in a variety of electronic applications. This device has a low saturation voltage, which reduces power loss and boosts overall effectiveness. Surface mount devices like the MMBT2222A-7-F come in a variety of packages, like the SOT-23, SOT-323, and SC-70 packaging. It is frequently employed in general-purpose applications that call for a compact, low voltage transistor, such as low power amplifier, switching, and digital circuits.
MMBT2222A-7-F Features
-
Low cost
-
High gain
-
Low noise
-
Small form factor
-
Fast switching speed
-
Low saturation voltage
-
Wide temperature range
MMBT2222A-7-F Applications
-
Digital circuits
-
Medical devices
-
Switching circuits
-
Industrial electronics
-
Automotive electronics
-
Low power amplifier circuits
-
General purpose applications
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