MJH11022G

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Mfr.Part #
MJH11022G
Manufacturer
onsemi
Package / Case
TO-247-3
Datasheet
Download
Description
TRANS NPN DARL 250V 15A TO247-3
Stock
2,400
In Stock :
2,400

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Collector Base Voltage (VCBO) :
250V
Terminal Finish :
Tin (Sn)
Emitter Base Voltage (VEBO) :
5V
REACH SVHC :
No SVHC
Surface Mount :
No
Lifecycle Status :
ACTIVE (Last Updated: 6 days ago)
Vce Saturation (Max) @ Ib, Ic :
4V @ 150mA, 15A
Power Dissipation :
150W
Pin Count :
3
Factory Lead Time :
6 Weeks
Number of Pins :
3
Collector Emitter Breakdown Voltage :
250V
Transistor Application :
SWITCHING
Width :
4.9mm
Current - Collector Cutoff (Max) :
1mA
Current Rating :
15A
Element Configuration :
Single
Published :
2002
Number of Elements :
1
Height :
12.2mm
Voltage - Rated DC :
250V
ECCN Code :
EAR99
Transistor Element Material :
SILICON
RoHS Status :
ROHS3 Compliant
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Operating Temperature :
-65°C~150°C TJ
JESD-609 Code :
e3
Frequency - Transition :
3MHz
Mounting Type :
Through Hole
Transition Frequency :
3MHz
DC Current Gain (hFE) (Min) @ Ic, Vce :
400 @ 10A 5V
Packaging :
Tube
Max Collector Current :
15A
Number of Terminations :
3
Weight :
6.500007g
Peak Reflow Temperature (Cel) :
260
Time@Peak Reflow Temperature-Max (s) :
40
Lead Free :
Lead Free
Collector Emitter Saturation Voltage :
2.5V
Package / Case :
TO-247-3
Continuous Collector Current :
15A
Max Power Dissipation :
150W
Radiation Hardening :
No
Case Connection :
COLLECTOR
Polarity :
NPN
Length :
15.2mm
Pbfree Code :
yes
Transistor Type :
NPN - Darlington
Collector Emitter Voltage (VCEO) :
250V
Datasheets
MJH11022G
Introducing Transistors - Bipolar (BJT) - Single onsemi MJH11022G from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Operating Temperature:-65°C~150°C TJ, Mounting Type:Through Hole, Number of Terminations:3, Package / Case:TO-247-3, MJH11022G pinout, MJH11022G datasheet PDF, MJH11022G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi MJH11022G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi MJH11022G


NPN - Darlington -65°C~150°C TJ 1mA 1 Elements 3 Terminations SILICON TO-247-3 Tube Through Hole

MJH11022G Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 400 @ 10A 5V DC current gain.As it features a collector emitter saturation voltage of 2.5V, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.For high efficiency, the continuous collector voltage must be kept at 15A.Keeping the emitter base voltage at 5V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 3MHz in the part.When collector current reaches its maximum, it can reach 15A volts.

MJH11022G Features


the DC current gain for this device is 400 @ 10A 5V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 4V @ 150mA, 15A
the emitter base voltage is kept at 5V
the current rating of this device is 15A
a transition frequency of 3MHz


MJH11022G Applications


There are a lot of ON Semiconductor
MJH11022G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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