MJH11022G

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Mfr.Part #
MJH11022G
Manufacturer
onsemi
Package / Case
TO-247-3
Datasheet
Download
Description
TRANS NPN DARL 250V 15A TO247-3
Stock
2,400
In Stock :
2,400

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Vce Saturation (Max) @ Ib, Ic :
4V @ 150mA, 15A
Lifecycle Status :
ACTIVE (Last Updated: 6 days ago)
RoHS Status :
ROHS3 Compliant
Emitter Base Voltage (VEBO) :
5V
Collector Base Voltage (VCBO) :
250V
Current Rating :
15A
Transition Frequency :
3MHz
Terminal Finish :
Tin (Sn)
Height :
12.2mm
DC Current Gain (hFE) (Min) @ Ic, Vce :
400 @ 10A 5V
REACH SVHC :
No SVHC
Max Power Dissipation :
150W
Collector Emitter Saturation Voltage :
2.5V
Transistor Element Material :
SILICON
Transistor Type :
NPN - Darlington
Packaging :
Tube
Number of Elements :
1
Radiation Hardening :
No
Time@Peak Reflow Temperature-Max (s) :
40
Frequency - Transition :
3MHz
Collector Emitter Voltage (VCEO) :
250V
Weight :
6.500007g
Transistor Application :
SWITCHING
Published :
2002
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
JESD-609 Code :
e3
Number of Terminations :
3
Polarity :
NPN
Element Configuration :
Single
Collector Emitter Breakdown Voltage :
250V
ECCN Code :
EAR99
Pin Count :
3
Power Dissipation :
150W
Number of Pins :
3
Case Connection :
COLLECTOR
Width :
4.9mm
Factory Lead Time :
6 Weeks
Max Collector Current :
15A
Peak Reflow Temperature (Cel) :
260
Lead Free :
Lead Free
Mounting Type :
Through Hole
Operating Temperature :
-65°C~150°C TJ
Voltage - Rated DC :
250V
Package / Case :
TO-247-3
Pbfree Code :
yes
Continuous Collector Current :
15A
Surface Mount :
No
Length :
15.2mm
Current - Collector Cutoff (Max) :
1mA
Datasheets
MJH11022G
Introducing Transistors - Bipolar (BJT) - Single onsemi MJH11022G from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Number of Pins:3, Mounting Type:Through Hole, Operating Temperature:-65°C~150°C TJ, Package / Case:TO-247-3, MJH11022G pinout, MJH11022G datasheet PDF, MJH11022G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi MJH11022G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi MJH11022G


NPN - Darlington -65°C~150°C TJ 1mA 1 Elements 3 Terminations SILICON TO-247-3 Tube Through Hole

MJH11022G Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 400 @ 10A 5V DC current gain.As it features a collector emitter saturation voltage of 2.5V, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.For high efficiency, the continuous collector voltage must be kept at 15A.Keeping the emitter base voltage at 5V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 3MHz in the part.When collector current reaches its maximum, it can reach 15A volts.

MJH11022G Features


the DC current gain for this device is 400 @ 10A 5V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 4V @ 150mA, 15A
the emitter base voltage is kept at 5V
the current rating of this device is 15A
a transition frequency of 3MHz


MJH11022G Applications


There are a lot of ON Semiconductor
MJH11022G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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