MJH11019G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Collector Emitter Voltage (VCEO) :

200V

Number of Pins :

3

Max Collector Current :

15A

DC Current Gain (hFE) (Min) @ Ic, Vce :

400 @ 10A 5V

Published :

2002

Radiation Hardening :

No

Package / Case :

TO-247-3

Surface Mount :

No

Packaging :

Tube

Current Rating :

-15A

Continuous Collector Current :

15A

Max Power Dissipation :

150W

JESD-609 Code :

e3

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Terminal Finish :

Tin (Sn)

Case Connection :

COLLECTOR

Operating Temperature :

-65°C~150°C TJ

Voltage - Rated DC :

-200V

ECCN Code :

EAR99

Mounting Type :

Through Hole

Lead Free :

Lead Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pbfree Code :

yes

Element Configuration :

Single

Weight :

6.500007g

Factory Lead Time :

7 Weeks

Frequency - Transition :

3MHz

Transistor Type :

PNP - Darlington

Transistor Element Material :

SILICON

Width :

4.9mm

Current - Collector Cutoff (Max) :

1mA

Collector Base Voltage (VCBO) :

200V

Collector Emitter Saturation Voltage :

2.5V

Height :

12.2mm

RoHS Status :

ROHS3 Compliant

REACH SVHC :

No SVHC

Pin Count :

3

Collector Emitter Breakdown Voltage :

200V

Vce Saturation (Max) @ Ib, Ic :

4V @ 150mA, 15A

Number of Elements :

1

Peak Reflow Temperature (Cel) :

260

Polarity :

PNP

Length :

15.2mm

Transition Frequency :

3MHz

Transistor Application :

SWITCHING

Time@Peak Reflow Temperature-Max (s) :

40

Number of Terminations :

3

Emitter Base Voltage (VEBO) :

5V