MJH11017
- Mfr.Part #
- MJH11017
- Manufacturer
- onsemi
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- TRANS PNP DARL 150V 15A SOT93
- Stock
- 3,347
- In Stock :
- 3,347
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Frequency - Transition :
- 3MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 400 @ 10A 5V
- Number of Terminations :
- 3
- Number of Pins :
- 3
- Factory Lead Time :
- 2 Weeks
- RoHS Status :
- ROHS3 Compliant
- Package / Case :
- TO-247-3
- Current Rating :
- -15A
- Lead Free :
- Lead Free
- Voltage - Rated DC :
- -150V
- Power Dissipation :
- 150W
- Case Connection :
- COLLECTOR
- Collector Emitter Saturation Voltage :
- 2.5V
- Emitter Base Voltage (VEBO) :
- 5V
- Collector Emitter Voltage (VCEO) :
- 150V
- Current - Collector Cutoff (Max) :
- 1mA
- Polarity :
- PNP
- ECCN Code :
- EAR99
- Vce Saturation (Max) @ Ib, Ic :
- 4V @ 150mA, 15A
- Published :
- 2001
- Transition Frequency :
- 3MHz
- Continuous Collector Current :
- 15A
- JESD-609 Code :
- e3
- Max Collector Current :
- 15A
- Terminal Finish :
- Tin (Sn)
- Peak Reflow Temperature (Cel) :
- 260
- Number of Elements :
- 1
- Max Power Dissipation :
- 150W
- Mounting Type :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Base Voltage (VCBO) :
- 150V
- Collector Emitter Breakdown Voltage :
- 150V
- Surface Mount :
- No
- Transistor Type :
- PNP - Darlington
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Pin Count :
- 3
- Pbfree Code :
- yes
- Transistor Application :
- SWITCHING
- Packaging :
- Tube
- Operating Temperature :
- -65°C~150°C TJ
- Element Configuration :
- Single
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Radiation Hardening :
- No
- Transistor Element Material :
- SILICON
- REACH SVHC :
- No SVHC
- Datasheets
- MJH11017
MJH11017 Documents

PNP - Darlington -65°C~150°C TJ 1mA 1 Elements 3 Terminations SILICON TO-247-3 Tube Through Hole
MJH11017G Overview
This device has a DC current gain of 400 @ 10A 5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 2.5V.A VCE saturation (Max) of 4V @ 150mA, 15A means Ic has reached its maximum value(saturated).Continuous collector voltages should be kept at 15A to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of -15A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 3MHz.A maximum collector current of 15A volts is possible.
MJH11017G Features
the DC current gain for this device is 400 @ 10A 5V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 4V @ 150mA, 15A
the emitter base voltage is kept at 5V
the current rating of this device is -15A
a transition frequency of 3MHz
MJH11017G Applications
There are a lot of ON Semiconductor
MJH11017G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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