MJH11017

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Mfr.Part #
MJH11017
Manufacturer
onsemi
Package / Case
TO-247-3
Datasheet
Download
Description
TRANS PNP DARL 150V 15A SOT93
Stock
3,347
In Stock :
3,347

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Frequency - Transition :
3MHz
DC Current Gain (hFE) (Min) @ Ic, Vce :
400 @ 10A 5V
Number of Terminations :
3
Number of Pins :
3
Factory Lead Time :
2 Weeks
RoHS Status :
ROHS3 Compliant
Package / Case :
TO-247-3
Current Rating :
-15A
Lead Free :
Lead Free
Voltage - Rated DC :
-150V
Power Dissipation :
150W
Case Connection :
COLLECTOR
Collector Emitter Saturation Voltage :
2.5V
Emitter Base Voltage (VEBO) :
5V
Collector Emitter Voltage (VCEO) :
150V
Current - Collector Cutoff (Max) :
1mA
Polarity :
PNP
ECCN Code :
EAR99
Vce Saturation (Max) @ Ib, Ic :
4V @ 150mA, 15A
Published :
2001
Transition Frequency :
3MHz
Continuous Collector Current :
15A
JESD-609 Code :
e3
Max Collector Current :
15A
Terminal Finish :
Tin (Sn)
Peak Reflow Temperature (Cel) :
260
Number of Elements :
1
Max Power Dissipation :
150W
Mounting Type :
Through Hole
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Collector Base Voltage (VCBO) :
150V
Collector Emitter Breakdown Voltage :
150V
Surface Mount :
No
Transistor Type :
PNP - Darlington
Time@Peak Reflow Temperature-Max (s) :
40
Pin Count :
3
Pbfree Code :
yes
Transistor Application :
SWITCHING
Packaging :
Tube
Operating Temperature :
-65°C~150°C TJ
Element Configuration :
Single
Lifecycle Status :
ACTIVE (Last Updated: 2 days ago)
Radiation Hardening :
No
Transistor Element Material :
SILICON
REACH SVHC :
No SVHC
Introducing Transistors - Bipolar (BJT) - Single onsemi MJH11017 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Number of Pins:3, Package / Case:TO-247-3, Mounting Type:Through Hole, Operating Temperature:-65°C~150°C TJ, MJH11017 pinout, MJH11017 datasheet PDF, MJH11017 amp .Beyond Transistors - Bipolar (BJT) - Single onsemi MJH11017 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi MJH11017


PNP - Darlington -65°C~150°C TJ 1mA 1 Elements 3 Terminations SILICON TO-247-3 Tube Through Hole

MJH11017G Overview


This device has a DC current gain of 400 @ 10A 5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 2.5V.A VCE saturation (Max) of 4V @ 150mA, 15A means Ic has reached its maximum value(saturated).Continuous collector voltages should be kept at 15A to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of -15A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 3MHz.A maximum collector current of 15A volts is possible.

MJH11017G Features


the DC current gain for this device is 400 @ 10A 5V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 4V @ 150mA, 15A
the emitter base voltage is kept at 5V
the current rating of this device is -15A
a transition frequency of 3MHz


MJH11017G Applications


There are a lot of ON Semiconductor
MJH11017G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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