MJH11017

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Mfr.Part #
MJH11017
Manufacturer
onsemi
Package / Case
TO-247-3
Datasheet
Download
Description
TRANS PNP DARL 150V 15A SOT93
Stock
3,347
In Stock :
3,347

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Peak Reflow Temperature (Cel) :
260
Max Power Dissipation :
150W
Polarity :
PNP
Operating Temperature :
-65°C~150°C TJ
Transistor Element Material :
SILICON
Mounting Type :
Through Hole
Number of Terminations :
3
Collector Emitter Voltage (VCEO) :
150V
ECCN Code :
EAR99
Collector Emitter Saturation Voltage :
2.5V
Collector Base Voltage (VCBO) :
150V
Transition Frequency :
3MHz
Frequency - Transition :
3MHz
Voltage - Rated DC :
-150V
Emitter Base Voltage (VEBO) :
5V
Terminal Finish :
Tin (Sn)
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Current - Collector Cutoff (Max) :
1mA
Max Collector Current :
15A
Radiation Hardening :
No
Collector Emitter Breakdown Voltage :
150V
JESD-609 Code :
e3
Published :
2001
Surface Mount :
No
Transistor Type :
PNP - Darlington
Power Dissipation :
150W
Current Rating :
-15A
REACH SVHC :
No SVHC
Vce Saturation (Max) @ Ib, Ic :
4V @ 150mA, 15A
RoHS Status :
ROHS3 Compliant
Continuous Collector Current :
15A
Number of Pins :
3
Pbfree Code :
yes
Element Configuration :
Single
Transistor Application :
SWITCHING
Packaging :
Tube
Case Connection :
COLLECTOR
Package / Case :
TO-247-3
Lead Free :
Lead Free
Pin Count :
3
Lifecycle Status :
ACTIVE (Last Updated: 2 days ago)
DC Current Gain (hFE) (Min) @ Ic, Vce :
400 @ 10A 5V
Time@Peak Reflow Temperature-Max (s) :
40
Number of Elements :
1
Factory Lead Time :
2 Weeks
Datasheets
MJH11017
Introducing Transistors - Bipolar (BJT) - Single onsemi MJH11017 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-65°C~150°C TJ, Mounting Type:Through Hole, Number of Terminations:3, Number of Pins:3, Package / Case:TO-247-3, MJH11017 pinout, MJH11017 datasheet PDF, MJH11017 amp .Beyond Transistors - Bipolar (BJT) - Single onsemi MJH11017 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi MJH11017


PNP - Darlington -65°C~150°C TJ 1mA 1 Elements 3 Terminations SILICON TO-247-3 Tube Through Hole

MJH11017G Overview


This device has a DC current gain of 400 @ 10A 5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 2.5V.A VCE saturation (Max) of 4V @ 150mA, 15A means Ic has reached its maximum value(saturated).Continuous collector voltages should be kept at 15A to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of -15A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 3MHz.A maximum collector current of 15A volts is possible.

MJH11017G Features


the DC current gain for this device is 400 @ 10A 5V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 4V @ 150mA, 15A
the emitter base voltage is kept at 5V
the current rating of this device is -15A
a transition frequency of 3MHz


MJH11017G Applications


There are a lot of ON Semiconductor
MJH11017G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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