MJH11019
- Mfr.Part #
- MJH11019
- Manufacturer
- onsemi
- Package / Case
- TO-218-3
- Datasheet
- Download
- Description
- TRANS PNP DARL 200V 15A SOT93
- Stock
- 1,412
- In Stock :
- 1,412
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- Polarity :
- PNP
- Collector Emitter Saturation Voltage :
- 2.5V
- Collector Base Voltage (VCBO) :
- 200V
- Peak Reflow Temperature (Cel) :
- 240
- Current - Collector Cutoff (Max) :
- 1mA
- Number of Elements :
- 1
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 400 @ 10A 5V
- Collector Emitter Voltage (VCEO) :
- 200V
- Collector Emitter Breakdown Voltage :
- 200V
- Pbfree Code :
- No
- Package / Case :
- TO-218-3
- Pin Count :
- 3
- Lead Free :
- Contains Lead
- Surface Mount :
- No
- Reach Compliance Code :
- not_compliant
- Case Connection :
- COLLECTOR
- Max Collector Current :
- 15A
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Time@Peak Reflow Temperature-Max (s) :
- 30
- RoHS Status :
- Non-RoHS Compliant
- ECCN Code :
- EAR99
- Number of Pins :
- 3
- JESD-609 Code :
- e0
- Voltage - Rated DC :
- -200V
- Transistor Type :
- PNP - Darlington
- Power Dissipation :
- 150W
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 2 weeks ago)
- Emitter Base Voltage (VEBO) :
- 5V
- Number of Terminations :
- 3
- Current Rating :
- -15A
- Frequency - Transition :
- 3MHz
- Operating Temperature :
- -65°C~150°C TJ
- Transistor Application :
- SWITCHING
- Element Configuration :
- Single
- Qualification Status :
- Not Qualified
- Max Power Dissipation :
- 150W
- Published :
- 2002
- Transition Frequency :
- 3MHz
- Packaging :
- Tube
- Vce Saturation (Max) @ Ib, Ic :
- 4V @ 150mA, 15A
- Mounting Type :
- Through Hole
- Continuous Collector Current :
- 15A
- Datasheets
- MJH11019

PNP - Darlington -65°C~150°C TJ 1mA 1 Elements 3 Terminations SILICON TO-218-3 Tube Through Hole
MJH11019 Overview
In this device, the DC current gain is 400 @ 10A 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 2.5V ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 4V @ 150mA, 15A.Maintaining the continuous collector voltage at 15A is essential for high efficiency.Keeping the emitter base voltage at 5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-15A).3MHz is present in the transition frequency.Maximum collector currents can be below 15A volts.
MJH11019 Features
the DC current gain for this device is 400 @ 10A 5V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 4V @ 150mA, 15A
the emitter base voltage is kept at 5V
the current rating of this device is -15A
a transition frequency of 3MHz
MJH11019 Applications
There are a lot of ON Semiconductor
MJH11019 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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