MJH11020

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Number of Elements :

1

Number of Terminations :

3

Collector Base Voltage (VCBO) :

200V

Length :

15.2mm

Terminal Finish :

Tin (Sn)

ECCN Code :

EAR99

Collector Emitter Voltage (VCEO) :

200V

Transition Frequency :

3MHz

Width :

4.9mm

Polarity :

NPN

Time@Peak Reflow Temperature-Max (s) :

40

Frequency - Transition :

3MHz

Vce Saturation (Max) @ Ib, Ic :

4V @ 150mA, 15A

Transistor Element Material :

SILICON

Max Power Dissipation :

150W

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

DC Current Gain (hFE) (Min) @ Ic, Vce :

400 @ 10A 5V

Published :

2002

Height :

12.2mm

Emitter Base Voltage (VEBO) :

5V

Pin Count :

3

Transistor Application :

SWITCHING

Radiation Hardening :

No

Continuous Collector Current :

15A

Power Dissipation :

150W

Factory Lead Time :

13 Weeks

RoHS Status :

ROHS3 Compliant

Number of Pins :

3

Surface Mount :

No

Packaging :

Tube

Pbfree Code :

yes

Operating Temperature :

-65°C~150°C TJ

Package / Case :

TO-247-3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Collector Current :

15A

Element Configuration :

Single

Collector Emitter Saturation Voltage :

2.5V

Peak Reflow Temperature (Cel) :

260

Current - Collector Cutoff (Max) :

1mA

Collector Emitter Breakdown Voltage :

200V

Mounting Type :

Through Hole

Transistor Type :

NPN - Darlington

Weight :

6.500007g

Lead Free :

Lead Free

Case Connection :

COLLECTOR

REACH SVHC :

No SVHC

Current Rating :

15A

Voltage - Rated DC :

200V

JESD-609 Code :

e3