MJF47G
- Mfr.Part #
- MJF47G
- Manufacturer
- onsemi
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- TRANS NPN 250V 1A TO220FP
- Stock
- 12,365
- In Stock :
- 12,365
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Base Voltage (VCBO) :
- 350V
- REACH SVHC :
- No SVHC
- Height :
- 6.35mm
- Emitter Base Voltage (VEBO) :
- 5V
- Collector Emitter Voltage (VCEO) :
- 250V
- Current Rating :
- 1A
- Element Configuration :
- Single
- Transistor Type :
- NPN
- RoHS Status :
- ROHS3 Compliant
- Terminal Finish :
- Tin (Sn)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Width :
- 6.35mm
- Power Dissipation :
- 2W
- JEDEC-95 Code :
- TO-220AB
- Case Connection :
- Isolated
- Transistor Application :
- SWITCHING
- Polarity/Channel Type :
- NPN
- Transition Frequency :
- 10MHz
- Factory Lead Time :
- 8 Weeks
- Number of Elements :
- 1
- Radiation Hardening :
- No
- Lead Free :
- Lead Free
- ECCN Code :
- EAR99
- Pin Count :
- 3
- Max Collector Current :
- 1A
- Max Power Dissipation :
- 2W
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 200mA, 1A
- Number of Terminations :
- 3
- Gain Bandwidth Product :
- 10MHz
- Pbfree Code :
- yes
- Length :
- 6.35mm
- Voltage - Rated DC :
- 250V
- Transistor Element Material :
- SILICON
- hFE Min :
- 30
- Peak Reflow Temperature (Cel) :
- 260
- Collector Emitter Saturation Voltage :
- 1V
- Packaging :
- Tube
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Operating Temperature :
- -65°C~150°C TJ
- Frequency :
- 10MHz
- Surface Mount :
- No
- Package / Case :
- TO-220-3 Full Pack
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 300mA 10V
- Mounting Type :
- Through Hole
- Additional Feature :
- UL RECOGNIZED
- Weight :
- 4.535924g
- Current - Collector Cutoff (Max) :
- 200μA
- Number of Pins :
- 3
- JESD-609 Code :
- e3
- Published :
- 2006
- Collector Emitter Breakdown Voltage :
- 250V
- Datasheets
- MJF47G

NPN -65°C~150°C TJ 200μA 1 Elements 3 Terminations SILICON NPN TO-220-3 Full Pack Tube Through Hole
MJF47G Overview
In this device, the DC current gain is 30 @ 300mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 1V ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1V @ 200mA, 1A.Keeping the emitter base voltage at 5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (1A).10MHz is present in the transition frequency.Maximum collector currents can be below 1A volts.
MJF47G Features
the DC current gain for this device is 30 @ 300mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 200mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 10MHz
MJF47G Applications
There are a lot of ON Semiconductor
MJF47G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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