MJF47G
- Mfr.Part #
- MJF47G
- Manufacturer
- onsemi
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- TRANS NPN 250V 1A TO220FP
- Stock
- 12,365
- In Stock :
- 12,365
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Emitter Base Voltage (VEBO) :
- 5V
- Radiation Hardening :
- No
- Collector Emitter Breakdown Voltage :
- 250V
- Weight :
- 4.535924g
- hFE Min :
- 30
- Terminal Finish :
- Tin (Sn)
- Surface Mount :
- No
- Number of Pins :
- 3
- JEDEC-95 Code :
- TO-220AB
- Peak Reflow Temperature (Cel) :
- 260
- Number of Elements :
- 1
- Collector Emitter Voltage (VCEO) :
- 250V
- Current - Collector Cutoff (Max) :
- 200μA
- Case Connection :
- Isolated
- REACH SVHC :
- No SVHC
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 300mA 10V
- Pbfree Code :
- yes
- Factory Lead Time :
- 8 Weeks
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Length :
- 6.35mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- TO-220-3 Full Pack
- Transistor Element Material :
- SILICON
- Published :
- 2006
- Transistor Type :
- NPN
- Number of Terminations :
- 3
- RoHS Status :
- ROHS3 Compliant
- Additional Feature :
- UL RECOGNIZED
- Current Rating :
- 1A
- Transition Frequency :
- 10MHz
- Height :
- 6.35mm
- Polarity/Channel Type :
- NPN
- Lead Free :
- Lead Free
- Max Collector Current :
- 1A
- ECCN Code :
- EAR99
- Gain Bandwidth Product :
- 10MHz
- Collector Base Voltage (VCBO) :
- 350V
- Power Dissipation :
- 2W
- Mounting Type :
- Through Hole
- Element Configuration :
- Single
- Operating Temperature :
- -65°C~150°C TJ
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 200mA, 1A
- Packaging :
- Tube
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Max Power Dissipation :
- 2W
- Transistor Application :
- SWITCHING
- Pin Count :
- 3
- Voltage - Rated DC :
- 250V
- Frequency :
- 10MHz
- Collector Emitter Saturation Voltage :
- 1V
- Width :
- 6.35mm
- JESD-609 Code :
- e3
- Datasheets
- MJF47G

NPN -65°C~150°C TJ 200μA 1 Elements 3 Terminations SILICON NPN TO-220-3 Full Pack Tube Through Hole
MJF47G Overview
In this device, the DC current gain is 30 @ 300mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 1V ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1V @ 200mA, 1A.Keeping the emitter base voltage at 5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (1A).10MHz is present in the transition frequency.Maximum collector currents can be below 1A volts.
MJF47G Features
the DC current gain for this device is 30 @ 300mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 200mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 10MHz
MJF47G Applications
There are a lot of ON Semiconductor
MJF47G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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