MJF45H11G
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- Mfr.Part #
- MJF45H11G
- Manufacturer
- onsemi
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- TRANS PNP 80V 10A TO220FP
- Stock
- 1
- In Stock ：
- 1
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 400mA, 8A
- ECCN Code :
- EAR99
- Pbfree Code :
- yes
- JEDEC-95 Code :
- TO-220AB
- Factory Lead Time :
- 8 Weeks
- Transistor Type :
- PNP
- Number of Pins :
- 3
- Lead Free :
- Lead Free
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- hFE Min :
- 40
- Length :
- 10.6172mm
- Element Configuration :
- Single
- Radiation Hardening :
- No
- Published :
- 2006
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- Collector Emitter Breakdown Voltage :
- 350V
- Current - Collector Cutoff (Max) :
- 1μA
- Package / Case :
- TO-220-3 Full Pack
- Transition Frequency :
- 40MHz
- Power Dissipation :
- 2W
- Emitter Base Voltage (VEBO) :
- 5V
- Contact Plating :
- Tin
- Max Breakdown Voltage :
- 80V
- REACH SVHC :
- No SVHC
- Operating Temperature :
- -55°C~150°C TJ
- Width :
- 4.9022mm
- Polarity/Channel Type :
- PNP
- Voltage - Rated DC :
- -80V
- Collector Emitter Voltage (VCEO) :
- 80V
- Packaging :
- Tube
- Case Connection :
- Isolated
- Collector Emitter Saturation Voltage :
- 1V
- Peak Reflow Temperature (Cel) :
- 260
- Height :
- 16.129mm
- Max Power Dissipation :
- 2W
- RoHS Status :
- ROHS3 Compliant
- Transistor Application :
- SWITCHING
- Time@Peak Reflow Temperature-Max (s) :
- 40
- JESD-609 Code :
- e3
- Weight :
- 4.535924g
- Frequency :
- 40MHz
- Surface Mount :
- No
- Number of Terminations :
- 3
- Current Rating :
- 41A
- Max Collector Current :
- 10A
- Gain Bandwidth Product :
- 40MHz
- Pin Count :
- 3
- Collector Base Voltage (VCBO) :
- 5V
- Mounting Type :
- Through Hole
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 4A 1V
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Datasheets
- MJF45H11G
PNP -55°C~150°C TJ 1μA 1 Elements 3 Terminations SILICON PNP TO-220-3 Full Pack Tube Through Hole
MJF45H11G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 40 @ 4A 1V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1V @ 400mA, 8A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is 41A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 40MHz.Single BJT transistor can take a breakdown input voltage of 80V volts.During maximum operation, collector current can be as low as 10A volts.
MJF45H11G Features
the DC current gain for this device is 40 @ 4A 1V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 400mA, 8A
the emitter base voltage is kept at 5V
the current rating of this device is 41A
a transition frequency of 40MHz
MJF45H11G Applications
There are a lot of ON Semiconductor
MJF45H11G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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