MJF45H11G
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- Mfr.Part #
- MJF45H11G
- Manufacturer
- onsemi
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- TRANS PNP 80V 10A TO220FP
- Stock
- 1
- In Stock ：
- 1
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Polarity/Channel Type :
- PNP
- Weight :
- 4.535924g
- Published :
- 2006
- Contact Plating :
- Tin
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Element Configuration :
- Single
- Packaging :
- Tube
- Peak Reflow Temperature (Cel) :
- 260
- Case Connection :
- Isolated
- hFE Min :
- 40
- Voltage - Rated DC :
- -80V
- Collector Emitter Saturation Voltage :
- 1V
- Transition Frequency :
- 40MHz
- Pbfree Code :
- yes
- Max Collector Current :
- 10A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 4A 1V
- Package / Case :
- TO-220-3 Full Pack
- REACH SVHC :
- No SVHC
- Collector Emitter Voltage (VCEO) :
- 80V
- Power Dissipation :
- 2W
- Height :
- 16.129mm
- Transistor Application :
- SWITCHING
- Frequency :
- 40MHz
- ECCN Code :
- EAR99
- Collector Emitter Breakdown Voltage :
- 350V
- JESD-609 Code :
- e3
- Pin Count :
- 3
- Transistor Type :
- PNP
- Current - Collector Cutoff (Max) :
- 1μA
- Length :
- 10.6172mm
- Max Power Dissipation :
- 2W
- Current Rating :
- 41A
- Surface Mount :
- No
- Lead Free :
- Lead Free
- Number of Terminations :
- 3
- Mounting Type :
- Through Hole
- Transistor Element Material :
- SILICON
- Factory Lead Time :
- 8 Weeks
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Operating Temperature :
- -55°C~150°C TJ
- Max Breakdown Voltage :
- 80V
- Width :
- 4.9022mm
- Number of Elements :
- 1
- Number of Pins :
- 3
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- RoHS Status :
- ROHS3 Compliant
- Gain Bandwidth Product :
- 40MHz
- Radiation Hardening :
- No
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 400mA, 8A
- Emitter Base Voltage (VEBO) :
- 5V
- Collector Base Voltage (VCBO) :
- 5V
- JEDEC-95 Code :
- TO-220AB
- Datasheets
- MJF45H11G
PNP -55°C~150°C TJ 1μA 1 Elements 3 Terminations SILICON PNP TO-220-3 Full Pack Tube Through Hole
MJF45H11G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 40 @ 4A 1V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1V @ 400mA, 8A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is 41A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 40MHz.Single BJT transistor can take a breakdown input voltage of 80V volts.During maximum operation, collector current can be as low as 10A volts.
MJF45H11G Features
the DC current gain for this device is 40 @ 4A 1V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 400mA, 8A
the emitter base voltage is kept at 5V
the current rating of this device is 41A
a transition frequency of 40MHz
MJF45H11G Applications
There are a lot of ON Semiconductor
MJF45H11G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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