MJF45H11G
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- Mfr.Part #
- MJF45H11G
- Manufacturer
- onsemi
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- TRANS PNP 80V 10A TO220FP
- Stock
- 1
- In Stock ：
- 1
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 4A 1V
- Element Configuration :
- Single
- JESD-609 Code :
- e3
- Collector Emitter Voltage (VCEO) :
- 80V
- REACH SVHC :
- No SVHC
- Height :
- 16.129mm
- Width :
- 4.9022mm
- Surface Mount :
- No
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Element Material :
- SILICON
- Factory Lead Time :
- 8 Weeks
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 400mA, 8A
- Peak Reflow Temperature (Cel) :
- 260
- Weight :
- 4.535924g
- Transition Frequency :
- 40MHz
- Max Collector Current :
- 10A
- Voltage - Rated DC :
- -80V
- Radiation Hardening :
- No
- Published :
- 2006
- Contact Plating :
- Tin
- JEDEC-95 Code :
- TO-220AB
- Package / Case :
- TO-220-3 Full Pack
- Transistor Application :
- SWITCHING
- Collector Emitter Breakdown Voltage :
- 350V
- hFE Min :
- 40
- Collector Base Voltage (VCBO) :
- 5V
- Gain Bandwidth Product :
- 40MHz
- Collector Emitter Saturation Voltage :
- 1V
- Number of Elements :
- 1
- Transistor Type :
- PNP
- Length :
- 10.6172mm
- Number of Pins :
- 3
- Case Connection :
- Isolated
- Emitter Base Voltage (VEBO) :
- 5V
- RoHS Status :
- ROHS3 Compliant
- Number of Terminations :
- 3
- Current Rating :
- 41A
- Max Breakdown Voltage :
- 80V
- Max Power Dissipation :
- 2W
- ECCN Code :
- EAR99
- Current - Collector Cutoff (Max) :
- 1μA
- Packaging :
- Tube
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Power Dissipation :
- 2W
- Lead Free :
- Lead Free
- Mounting Type :
- Through Hole
- Frequency :
- 40MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pbfree Code :
- yes
- Pin Count :
- 3
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Polarity/Channel Type :
- PNP
- Datasheets
- MJF45H11G
PNP -55°C~150°C TJ 1μA 1 Elements 3 Terminations SILICON PNP TO-220-3 Full Pack Tube Through Hole
MJF45H11G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 40 @ 4A 1V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1V @ 400mA, 8A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is 41A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 40MHz.Single BJT transistor can take a breakdown input voltage of 80V volts.During maximum operation, collector current can be as low as 10A volts.
MJF45H11G Features
the DC current gain for this device is 40 @ 4A 1V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 400mA, 8A
the emitter base voltage is kept at 5V
the current rating of this device is 41A
a transition frequency of 40MHz
MJF45H11G Applications
There are a lot of ON Semiconductor
MJF45H11G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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