MJF45H11

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Mfr.Part #
MJF45H11
Manufacturer
onsemi
Package / Case
TO-220-3 Full Pack
Datasheet
Download
Description
TRANS PNP 80V 10A TO220FP
Stock
1,876
In Stock :
1,876

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Contact Plating :
Tin
RoHS Status :
ROHS3 Compliant
Lead Free :
Lead Free
Max Power Dissipation :
2W
hFE Min :
40
Current - Collector Cutoff (Max) :
1μA
Power Dissipation :
2W
Length :
10.6172mm
Surface Mount :
No
Width :
4.9022mm
Weight :
4.535924g
Transistor Type :
PNP
JESD-609 Code :
e3
Published :
2006
Gain Bandwidth Product :
40MHz
DC Current Gain (hFE) (Min) @ Ic, Vce :
40 @ 4A 1V
Number of Pins :
3
Pbfree Code :
yes
Number of Terminations :
3
Transistor Element Material :
SILICON
Current Rating :
41A
JEDEC-95 Code :
TO-220AB
Lifecycle Status :
ACTIVE (Last Updated: 1 day ago)
Mounting Type :
Through Hole
Collector Emitter Breakdown Voltage :
350V
Emitter Base Voltage (VEBO) :
5V
Collector Emitter Saturation Voltage :
1V
Factory Lead Time :
8 Weeks
Packaging :
Tube
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Max Collector Current :
10A
Peak Reflow Temperature (Cel) :
260
Voltage - Rated DC :
-80V
Number of Elements :
1
Max Breakdown Voltage :
80V
Transition Frequency :
40MHz
Collector Emitter Voltage (VCEO) :
80V
Pin Count :
3
Operating Temperature :
-55°C~150°C TJ
Collector Base Voltage (VCBO) :
5V
ECCN Code :
EAR99
Polarity/Channel Type :
PNP
Case Connection :
Isolated
Vce Saturation (Max) @ Ib, Ic :
1V @ 400mA, 8A
Package / Case :
TO-220-3 Full Pack
Frequency :
40MHz
Transistor Application :
SWITCHING
Time@Peak Reflow Temperature-Max (s) :
40
Height :
16.129mm
REACH SVHC :
No SVHC
Radiation Hardening :
No
Element Configuration :
Single
Introducing Transistors - Bipolar (BJT) - Single onsemi MJF45H11 from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Number of Terminations:3, Mounting Type:Through Hole, Operating Temperature:-55°C~150°C TJ, Package / Case:TO-220-3 Full Pack, MJF45H11 pinout, MJF45H11 datasheet PDF, MJF45H11 amp .Beyond Transistors - Bipolar (BJT) - Single onsemi MJF45H11 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi MJF45H11


PNP -55°C~150°C TJ 1μA 1 Elements 3 Terminations SILICON PNP TO-220-3 Full Pack Tube Through Hole

MJF45H11G Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 40 @ 4A 1V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1V @ 400mA, 8A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is 41A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 40MHz.Single BJT transistor can take a breakdown input voltage of 80V volts.During maximum operation, collector current can be as low as 10A volts.

MJF45H11G Features


the DC current gain for this device is 40 @ 4A 1V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 400mA, 8A
the emitter base voltage is kept at 5V
the current rating of this device is 41A
a transition frequency of 40MHz


MJF45H11G Applications


There are a lot of ON Semiconductor
MJF45H11G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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