MJF45H11
- Mfr.Part #
- MJF45H11
- Manufacturer
- onsemi
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- TRANS PNP 80V 10A TO220FP
- Stock
- 1,876
- In Stock :
- 1,876
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Length :
- 10.6172mm
- Max Power Dissipation :
- 2W
- Gain Bandwidth Product :
- 40MHz
- JEDEC-95 Code :
- TO-220AB
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 4A 1V
- Radiation Hardening :
- No
- Package / Case :
- TO-220-3 Full Pack
- hFE Min :
- 40
- Collector Emitter Breakdown Voltage :
- 350V
- Transistor Type :
- PNP
- Surface Mount :
- No
- Element Configuration :
- Single
- RoHS Status :
- ROHS3 Compliant
- Polarity/Channel Type :
- PNP
- Number of Elements :
- 1
- Lead Free :
- Lead Free
- Published :
- 2006
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 400mA, 8A
- Number of Pins :
- 3
- Collector Emitter Saturation Voltage :
- 1V
- Voltage - Rated DC :
- -80V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Emitter Base Voltage (VEBO) :
- 5V
- Factory Lead Time :
- 8 Weeks
- Max Breakdown Voltage :
- 80V
- Max Collector Current :
- 10A
- Current - Collector Cutoff (Max) :
- 1μA
- Collector Base Voltage (VCBO) :
- 5V
- Width :
- 4.9022mm
- Case Connection :
- Isolated
- Contact Plating :
- Tin
- JESD-609 Code :
- e3
- Number of Terminations :
- 3
- Weight :
- 4.535924g
- Transition Frequency :
- 40MHz
- Pbfree Code :
- yes
- Frequency :
- 40MHz
- Transistor Application :
- SWITCHING
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- REACH SVHC :
- No SVHC
- Height :
- 16.129mm
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Pin Count :
- 3
- Collector Emitter Voltage (VCEO) :
- 80V
- ECCN Code :
- EAR99
- Operating Temperature :
- -55°C~150°C TJ
- Peak Reflow Temperature (Cel) :
- 260
- Mounting Type :
- Through Hole
- Current Rating :
- 41A
- Transistor Element Material :
- SILICON
- Packaging :
- Tube
- Power Dissipation :
- 2W
- Datasheets
- MJF45H11

PNP -55°C~150°C TJ 1μA 1 Elements 3 Terminations SILICON PNP TO-220-3 Full Pack Tube Through Hole
MJF45H11G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 40 @ 4A 1V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1V @ 400mA, 8A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is 41A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 40MHz.Single BJT transistor can take a breakdown input voltage of 80V volts.During maximum operation, collector current can be as low as 10A volts.
MJF45H11G Features
the DC current gain for this device is 40 @ 4A 1V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 400mA, 8A
the emitter base voltage is kept at 5V
the current rating of this device is 41A
a transition frequency of 40MHz
MJF45H11G Applications
There are a lot of ON Semiconductor
MJF45H11G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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