MJF45H11
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- Mfr.Part #
- MJF45H11
- Manufacturer
- onsemi
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- TRANS PNP 80V 10A TO220FP
- Stock
- 1,876
- In Stock ：
- 1,876
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Frequency :
- 40MHz
- Factory Lead Time :
- 8 Weeks
- Emitter Base Voltage (VEBO) :
- 5V
- Voltage - Rated DC :
- -80V
- Lead Free :
- Lead Free
- Collector Emitter Voltage (VCEO) :
- 80V
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 400mA, 8A
- Height :
- 16.129mm
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 4A 1V
- Transistor Type :
- PNP
- Transistor Application :
- SWITCHING
- Number of Elements :
- 1
- hFE Min :
- 40
- Pin Count :
- 3
- ECCN Code :
- EAR99
- Peak Reflow Temperature (Cel) :
- 260
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Contact Plating :
- Tin
- REACH SVHC :
- No SVHC
- Max Collector Current :
- 10A
- Published :
- 2006
- Pbfree Code :
- yes
- Transition Frequency :
- 40MHz
- Weight :
- 4.535924g
- Power Dissipation :
- 2W
- Mounting Type :
- Through Hole
- Collector Emitter Saturation Voltage :
- 1V
- JEDEC-95 Code :
- TO-220AB
- Surface Mount :
- No
- Length :
- 10.6172mm
- Max Breakdown Voltage :
- 80V
- Case Connection :
- Isolated
- Packaging :
- Tube
- Number of Pins :
- 3
- Current Rating :
- 41A
- Polarity/Channel Type :
- PNP
- Package / Case :
- TO-220-3 Full Pack
- Width :
- 4.9022mm
- Operating Temperature :
- -55°C~150°C TJ
- RoHS Status :
- ROHS3 Compliant
- Max Power Dissipation :
- 2W
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Number of Terminations :
- 3
- Collector Emitter Breakdown Voltage :
- 350V
- JESD-609 Code :
- e3
- Gain Bandwidth Product :
- 40MHz
- Current - Collector Cutoff (Max) :
- 1μA
- Radiation Hardening :
- No
- Element Configuration :
- Single
- Transistor Element Material :
- SILICON
- Collector Base Voltage (VCBO) :
- 5V
- Datasheets
- MJF45H11
MJF45H11 Documents
PNP -55°C~150°C TJ 1μA 1 Elements 3 Terminations SILICON PNP TO-220-3 Full Pack Tube Through Hole
MJF45H11G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 40 @ 4A 1V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1V @ 400mA, 8A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is 41A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 40MHz.Single BJT transistor can take a breakdown input voltage of 80V volts.During maximum operation, collector current can be as low as 10A volts.
MJF45H11G Features
the DC current gain for this device is 40 @ 4A 1V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 400mA, 8A
the emitter base voltage is kept at 5V
the current rating of this device is 41A
a transition frequency of 40MHz
MJF45H11G Applications
There are a lot of ON Semiconductor
MJF45H11G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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