MJF45H11
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- Mfr.Part #
- MJF45H11
- Manufacturer
- onsemi
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- TRANS PNP 80V 10A TO220FP
- Stock
- 1,876
- In Stock ：
- 1,876
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Package / Case :
- TO-220-3 Full Pack
- Width :
- 4.9022mm
- Peak Reflow Temperature (Cel) :
- 260
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Number of Elements :
- 1
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 400mA, 8A
- Collector Emitter Saturation Voltage :
- 1V
- RoHS Status :
- ROHS3 Compliant
- Pin Count :
- 3
- Factory Lead Time :
- 8 Weeks
- Surface Mount :
- No
- JESD-609 Code :
- e3
- Transistor Type :
- PNP
- Current - Collector Cutoff (Max) :
- 1μA
- Polarity/Channel Type :
- PNP
- Mounting Type :
- Through Hole
- Packaging :
- Tube
- Case Connection :
- Isolated
- Transistor Application :
- SWITCHING
- Max Collector Current :
- 10A
- Operating Temperature :
- -55°C~150°C TJ
- Emitter Base Voltage (VEBO) :
- 5V
- Radiation Hardening :
- No
- hFE Min :
- 40
- Number of Pins :
- 3
- Pbfree Code :
- yes
- Number of Terminations :
- 3
- Transition Frequency :
- 40MHz
- Collector Emitter Voltage (VCEO) :
- 80V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 4A 1V
- Voltage - Rated DC :
- -80V
- REACH SVHC :
- No SVHC
- Transistor Element Material :
- SILICON
- Length :
- 10.6172mm
- Max Power Dissipation :
- 2W
- Frequency :
- 40MHz
- Height :
- 16.129mm
- Lead Free :
- Lead Free
- Power Dissipation :
- 2W
- Collector Base Voltage (VCBO) :
- 5V
- Current Rating :
- 41A
- Element Configuration :
- Single
- ECCN Code :
- EAR99
- Max Breakdown Voltage :
- 80V
- Published :
- 2006
- Gain Bandwidth Product :
- 40MHz
- Collector Emitter Breakdown Voltage :
- 350V
- JEDEC-95 Code :
- TO-220AB
- Weight :
- 4.535924g
- Contact Plating :
- Tin
- Datasheets
- MJF45H11
MJF45H11 Documents
PNP -55°C~150°C TJ 1μA 1 Elements 3 Terminations SILICON PNP TO-220-3 Full Pack Tube Through Hole
MJF45H11G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 40 @ 4A 1V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1V @ 400mA, 8A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is 41A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 40MHz.Single BJT transistor can take a breakdown input voltage of 80V volts.During maximum operation, collector current can be as low as 10A volts.
MJF45H11G Features
the DC current gain for this device is 40 @ 4A 1V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 400mA, 8A
the emitter base voltage is kept at 5V
the current rating of this device is 41A
a transition frequency of 40MHz
MJF45H11G Applications
There are a lot of ON Semiconductor
MJF45H11G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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