MJF45H11
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- Mfr.Part #
- MJF45H11
- Manufacturer
- onsemi
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- TRANS PNP 80V 10A TO220FP
- Stock
- 1,876
- In Stock ：
- 1,876
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Contact Plating :
- Tin
- RoHS Status :
- ROHS3 Compliant
- Lead Free :
- Lead Free
- Max Power Dissipation :
- 2W
- hFE Min :
- 40
- Current - Collector Cutoff (Max) :
- 1μA
- Power Dissipation :
- 2W
- Length :
- 10.6172mm
- Surface Mount :
- No
- Width :
- 4.9022mm
- Weight :
- 4.535924g
- Transistor Type :
- PNP
- JESD-609 Code :
- e3
- Published :
- 2006
- Gain Bandwidth Product :
- 40MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 4A 1V
- Number of Pins :
- 3
- Pbfree Code :
- yes
- Number of Terminations :
- 3
- Transistor Element Material :
- SILICON
- Current Rating :
- 41A
- JEDEC-95 Code :
- TO-220AB
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Mounting Type :
- Through Hole
- Collector Emitter Breakdown Voltage :
- 350V
- Emitter Base Voltage (VEBO) :
- 5V
- Collector Emitter Saturation Voltage :
- 1V
- Factory Lead Time :
- 8 Weeks
- Packaging :
- Tube
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Collector Current :
- 10A
- Peak Reflow Temperature (Cel) :
- 260
- Voltage - Rated DC :
- -80V
- Number of Elements :
- 1
- Max Breakdown Voltage :
- 80V
- Transition Frequency :
- 40MHz
- Collector Emitter Voltage (VCEO) :
- 80V
- Pin Count :
- 3
- Operating Temperature :
- -55°C~150°C TJ
- Collector Base Voltage (VCBO) :
- 5V
- ECCN Code :
- EAR99
- Polarity/Channel Type :
- PNP
- Case Connection :
- Isolated
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 400mA, 8A
- Package / Case :
- TO-220-3 Full Pack
- Frequency :
- 40MHz
- Transistor Application :
- SWITCHING
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Height :
- 16.129mm
- REACH SVHC :
- No SVHC
- Radiation Hardening :
- No
- Element Configuration :
- Single
- Datasheets
- MJF45H11
MJF45H11 Documents
PNP -55°C~150°C TJ 1μA 1 Elements 3 Terminations SILICON PNP TO-220-3 Full Pack Tube Through Hole
MJF45H11G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 40 @ 4A 1V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1V @ 400mA, 8A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is 41A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 40MHz.Single BJT transistor can take a breakdown input voltage of 80V volts.During maximum operation, collector current can be as low as 10A volts.
MJF45H11G Features
the DC current gain for this device is 40 @ 4A 1V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 400mA, 8A
the emitter base voltage is kept at 5V
the current rating of this device is 41A
a transition frequency of 40MHz
MJF45H11G Applications
There are a lot of ON Semiconductor
MJF45H11G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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