MJF44H11G
- Mfr.Part #
- MJF44H11G
- Manufacturer
- onsemi
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- TRANS NPN 80V 10A TO220FP
- Stock
- 1
- In Stock :
- 1
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Weight :
- 4.535924g
- Height :
- 16.129mm
- Current - Collector Cutoff (Max) :
- 1μA
- Power Dissipation :
- 2W
- Transistor Type :
- NPN
- JEDEC-95 Code :
- TO-220AB
- Number of Terminations :
- 3
- ECCN Code :
- EAR99
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Through Hole
- Surface Mount :
- No
- Max Collector Current :
- 10A
- Polarity/Channel Type :
- NPN
- Pbfree Code :
- yes
- Element Configuration :
- Single
- Contact Plating :
- Tin
- JESD-609 Code :
- e3
- Peak Reflow Temperature (Cel) :
- 260
- Radiation Hardening :
- No
- Emitter Base Voltage (VEBO) :
- 5V
- Lifecycle Status :
- ACTIVE (Last Updated: 12 hours ago)
- Transistor Application :
- SWITCHING
- Transition Frequency :
- 50MHz
- Collector Emitter Breakdown Voltage :
- 80V
- hFE Min :
- 60
- Collector Base Voltage (VCBO) :
- 5V
- RoHS Status :
- ROHS3 Compliant
- Package / Case :
- TO-220-3 Full Pack
- Lead Free :
- Lead Free
- Transistor Element Material :
- SILICON
- Factory Lead Time :
- 8 Weeks
- Collector Emitter Saturation Voltage :
- 1V
- Number of Elements :
- 1
- Width :
- 4.9022mm
- Operating Temperature :
- -55°C~150°C TJ
- Packaging :
- Tube
- Voltage - Rated DC :
- 80V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 4A 1V
- Case Connection :
- Isolated
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Published :
- 2001
- Max Power Dissipation :
- 2W
- Current Rating :
- 10A
- REACH SVHC :
- No SVHC
- Number of Pins :
- 3
- Frequency :
- 50MHz
- Gain Bandwidth Product :
- 50MHz
- Length :
- 10.6172mm
- Collector Emitter Voltage (VCEO) :
- 80V
- Pin Count :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 400mA, 8A
- Datasheets
- MJF44H11G

NPN -55°C~150°C TJ 1μA 1 Elements 3 Terminations SILICON NPN TO-220-3 Full Pack Tube Through Hole
MJF44H11G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 40 @ 4A 1V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1V @ 400mA, 8A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is 10A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 50MHz.During maximum operation, collector current can be as low as 10A volts.
MJF44H11G Features
the DC current gain for this device is 40 @ 4A 1V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 400mA, 8A
the emitter base voltage is kept at 5V
the current rating of this device is 10A
a transition frequency of 50MHz
MJF44H11G Applications
There are a lot of ON Semiconductor
MJF44H11G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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