MJF44H11G

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Mfr.Part #
MJF44H11G
Manufacturer
onsemi
Package / Case
TO-220-3 Full Pack
Datasheet
Download
Description
TRANS NPN 80V 10A TO220FP
Stock
1
In Stock :
1

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Transistor Type :
NPN
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Terminations :
3
JEDEC-95 Code :
TO-220AB
Transistor Application :
SWITCHING
Number of Elements :
1
Collector Emitter Saturation Voltage :
1V
Width :
4.9022mm
Height :
16.129mm
Published :
2001
Collector Emitter Voltage (VCEO) :
80V
Emitter Base Voltage (VEBO) :
5V
Case Connection :
Isolated
Mounting Type :
Through Hole
Length :
10.6172mm
Package / Case :
TO-220-3 Full Pack
hFE Min :
60
Peak Reflow Temperature (Cel) :
260
ECCN Code :
EAR99
Polarity/Channel Type :
NPN
Gain Bandwidth Product :
50MHz
JESD-609 Code :
e3
Current - Collector Cutoff (Max) :
1μA
Max Collector Current :
10A
Radiation Hardening :
No
Lifecycle Status :
ACTIVE (Last Updated: 12 hours ago)
Frequency :
50MHz
Power Dissipation :
2W
Lead Free :
Lead Free
Current Rating :
10A
Collector Emitter Breakdown Voltage :
80V
Element Configuration :
Single
Surface Mount :
No
Pin Count :
3
Contact Plating :
Tin
Collector Base Voltage (VCBO) :
5V
DC Current Gain (hFE) (Min) @ Ic, Vce :
40 @ 4A 1V
Number of Pins :
3
Max Power Dissipation :
2W
Factory Lead Time :
8 Weeks
Transistor Element Material :
SILICON
Voltage - Rated DC :
80V
Vce Saturation (Max) @ Ib, Ic :
1V @ 400mA, 8A
REACH SVHC :
No SVHC
Weight :
4.535924g
Transition Frequency :
50MHz
Packaging :
Tube
Time@Peak Reflow Temperature-Max (s) :
40
Operating Temperature :
-55°C~150°C TJ
Pbfree Code :
yes
RoHS Status :
ROHS3 Compliant
Datasheets
MJF44H11G
Introducing Transistors - Bipolar (BJT) - Single onsemi MJF44H11G from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Mounting Type:Through Hole, Package / Case:TO-220-3 Full Pack, Number of Pins:3, Operating Temperature:-55°C~150°C TJ, MJF44H11G pinout, MJF44H11G datasheet PDF, MJF44H11G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi MJF44H11G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi MJF44H11G


NPN -55°C~150°C TJ 1μA 1 Elements 3 Terminations SILICON NPN TO-220-3 Full Pack Tube Through Hole

MJF44H11G Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 40 @ 4A 1V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1V @ 400mA, 8A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is 10A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 50MHz.During maximum operation, collector current can be as low as 10A volts.

MJF44H11G Features


the DC current gain for this device is 40 @ 4A 1V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 400mA, 8A
the emitter base voltage is kept at 5V
the current rating of this device is 10A
a transition frequency of 50MHz


MJF44H11G Applications


There are a lot of ON Semiconductor
MJF44H11G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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