MJF44H11G
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- Mfr.Part #
- MJF44H11G
- Manufacturer
- onsemi
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- TRANS NPN 80V 10A TO220FP
- Stock
- 1
- In Stock ：
- 1
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Weight :
- 4.535924g
- Current - Collector Cutoff (Max) :
- 1μA
- Transition Frequency :
- 50MHz
- Max Power Dissipation :
- 2W
- Element Configuration :
- Single
- Collector Base Voltage (VCBO) :
- 5V
- Factory Lead Time :
- 8 Weeks
- Height :
- 16.129mm
- Collector Emitter Saturation Voltage :
- 1V
- Power Dissipation :
- 2W
- Length :
- 10.6172mm
- Radiation Hardening :
- No
- Max Collector Current :
- 10A
- JESD-609 Code :
- e3
- Pbfree Code :
- yes
- Emitter Base Voltage (VEBO) :
- 5V
- Case Connection :
- Isolated
- Collector Emitter Breakdown Voltage :
- 80V
- hFE Min :
- 60
- Lifecycle Status :
- ACTIVE (Last Updated: 12 hours ago)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 4A 1V
- Pin Count :
- 3
- Contact Plating :
- Tin
- Voltage - Rated DC :
- 80V
- Number of Elements :
- 1
- JEDEC-95 Code :
- TO-220AB
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 400mA, 8A
- Mounting Type :
- Through Hole
- RoHS Status :
- ROHS3 Compliant
- Lead Free :
- Lead Free
- Frequency :
- 50MHz
- Gain Bandwidth Product :
- 50MHz
- Peak Reflow Temperature (Cel) :
- 260
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Transistor Type :
- NPN
- Number of Pins :
- 3
- Transistor Application :
- SWITCHING
- Surface Mount :
- No
- Current Rating :
- 10A
- Number of Terminations :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- -55°C~150°C TJ
- Width :
- 4.9022mm
- Package / Case :
- TO-220-3 Full Pack
- Transistor Element Material :
- SILICON
- Polarity/Channel Type :
- NPN
- REACH SVHC :
- No SVHC
- ECCN Code :
- EAR99
- Published :
- 2001
- Collector Emitter Voltage (VCEO) :
- 80V
- Packaging :
- Tube
- Datasheets
- MJF44H11G
NPN -55°C~150°C TJ 1μA 1 Elements 3 Terminations SILICON NPN TO-220-3 Full Pack Tube Through Hole
MJF44H11G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 40 @ 4A 1V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1V @ 400mA, 8A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is 10A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 50MHz.During maximum operation, collector current can be as low as 10A volts.
MJF44H11G Features
the DC current gain for this device is 40 @ 4A 1V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 400mA, 8A
the emitter base voltage is kept at 5V
the current rating of this device is 10A
a transition frequency of 50MHz
MJF44H11G Applications
There are a lot of ON Semiconductor
MJF44H11G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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