MJF44H11
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- Mfr.Part #
- MJF44H11
- Manufacturer
- onsemi
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- TRANS NPN 80V 10A TO220FP
- Stock
- 6,475
- In Stock ：
- 6,475
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Surface Mount :
- No
- Packaging :
- Tube
- Transistor Element Material :
- SILICON
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 4A 1V
- Length :
- 10.6172mm
- Case Connection :
- Isolated
- Element Configuration :
- Single
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Voltage (VCEO) :
- 80V
- Mounting Type :
- Through Hole
- Weight :
- 4.535924g
- Operating Temperature :
- -55°C~150°C TJ
- Radiation Hardening :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Voltage - Rated DC :
- 80V
- Frequency :
- 50MHz
- Polarity/Channel Type :
- NPN
- Number of Terminations :
- 3
- Package / Case :
- TO-220-3 Full Pack
- JESD-609 Code :
- e3
- Transition Frequency :
- 50MHz
- ECCN Code :
- EAR99
- Collector Emitter Saturation Voltage :
- 1V
- Transistor Type :
- NPN
- Height :
- 16.129mm
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 400mA, 8A
- Collector Emitter Breakdown Voltage :
- 80V
- Pin Count :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- 40
- JEDEC-95 Code :
- TO-220AB
- Lead Free :
- Lead Free
- Power Dissipation :
- 2W
- Pbfree Code :
- yes
- Contact Plating :
- Tin
- Transistor Application :
- SWITCHING
- Max Collector Current :
- 10A
- Lifecycle Status :
- ACTIVE (Last Updated: 12 hours ago)
- Published :
- 2001
- Max Power Dissipation :
- 2W
- Current Rating :
- 10A
- Current - Collector Cutoff (Max) :
- 1μA
- Factory Lead Time :
- 8 Weeks
- hFE Min :
- 60
- Gain Bandwidth Product :
- 50MHz
- Peak Reflow Temperature (Cel) :
- 260
- Collector Base Voltage (VCBO) :
- 5V
- Width :
- 4.9022mm
- Emitter Base Voltage (VEBO) :
- 5V
- Number of Pins :
- 3
- Number of Elements :
- 1
- REACH SVHC :
- No SVHC
- Datasheets
- MJF44H11
NPN -55°C~150°C TJ 1μA 1 Elements 3 Terminations SILICON NPN TO-220-3 Full Pack Tube Through Hole
MJF44H11G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 40 @ 4A 1V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1V @ 400mA, 8A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is 10A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 50MHz.During maximum operation, collector current can be as low as 10A volts.
MJF44H11G Features
the DC current gain for this device is 40 @ 4A 1V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 400mA, 8A
the emitter base voltage is kept at 5V
the current rating of this device is 10A
a transition frequency of 50MHz
MJF44H11G Applications
There are a lot of ON Semiconductor
MJF44H11G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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