MJF44H11
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- Mfr.Part #
- MJF44H11
- Manufacturer
- onsemi
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- TRANS NPN 80V 10A TO220FP
- Stock
- 6,475
- In Stock ：
- 6,475
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 400mA, 8A
- Polarity/Channel Type :
- NPN
- Transition Frequency :
- 50MHz
- JESD-609 Code :
- e3
- Radiation Hardening :
- No
- REACH SVHC :
- No SVHC
- Current Rating :
- 10A
- Gain Bandwidth Product :
- 50MHz
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Surface Mount :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Height :
- 16.129mm
- Voltage - Rated DC :
- 80V
- Max Power Dissipation :
- 2W
- Weight :
- 4.535924g
- Peak Reflow Temperature (Cel) :
- 260
- Factory Lead Time :
- 8 Weeks
- Element Configuration :
- Single
- Pin Count :
- 3
- Width :
- 4.9022mm
- Number of Terminations :
- 3
- Collector Emitter Voltage (VCEO) :
- 80V
- Current - Collector Cutoff (Max) :
- 1μA
- Emitter Base Voltage (VEBO) :
- 5V
- Contact Plating :
- Tin
- Lifecycle Status :
- ACTIVE (Last Updated: 12 hours ago)
- ECCN Code :
- EAR99
- Operating Temperature :
- -55°C~150°C TJ
- Pbfree Code :
- yes
- Collector Base Voltage (VCBO) :
- 5V
- Number of Pins :
- 3
- Collector Emitter Breakdown Voltage :
- 80V
- Transistor Element Material :
- SILICON
- JEDEC-95 Code :
- TO-220AB
- Mounting Type :
- Through Hole
- RoHS Status :
- ROHS3 Compliant
- Packaging :
- Tube
- Published :
- 2001
- Transistor Type :
- NPN
- hFE Min :
- 60
- Number of Elements :
- 1
- Package / Case :
- TO-220-3 Full Pack
- Transistor Application :
- SWITCHING
- Power Dissipation :
- 2W
- Collector Emitter Saturation Voltage :
- 1V
- Length :
- 10.6172mm
- Lead Free :
- Lead Free
- Frequency :
- 50MHz
- Max Collector Current :
- 10A
- Case Connection :
- Isolated
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 4A 1V
- Datasheets
- MJF44H11
NPN -55°C~150°C TJ 1μA 1 Elements 3 Terminations SILICON NPN TO-220-3 Full Pack Tube Through Hole
MJF44H11G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 40 @ 4A 1V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1V @ 400mA, 8A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is 10A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 50MHz.During maximum operation, collector current can be as low as 10A volts.
MJF44H11G Features
the DC current gain for this device is 40 @ 4A 1V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 400mA, 8A
the emitter base voltage is kept at 5V
the current rating of this device is 10A
a transition frequency of 50MHz
MJF44H11G Applications
There are a lot of ON Semiconductor
MJF44H11G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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