MJE803G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Lead Free :

Lead Free

Additional Feature :

BUILT IN BIAS RESISTOR

Number of Elements :

1

Max Power Dissipation :

40W

Base Part Number :

MJE803

Polarity :

NPN

Element Configuration :

Single

Radiation Hardening :

No

Length :

6.35mm

Surface Mount :

No

Transistor Element Material :

SILICON

Number of Terminations :

3

Terminal Finish :

Tin (Sn)

Collector Emitter Saturation Voltage :

2.5V

Time@Peak Reflow Temperature-Max (s) :

40

hFE Min :

100

Factory Lead Time :

2 Weeks

Power Dissipation :

40W

Height :

6.35mm

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

DC Current Gain (hFE) (Min) @ Ic, Vce :

750 @ 2A 3V

Width :

6.35mm

Pbfree Code :

yes

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Packaging :

Bulk

Weight :

4.535924g

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current Rating :

4A

Number of Pins :

3

Voltage - Rated DC :

80V

Mounting Type :

Through Hole

Collector Emitter Voltage (VCEO) :

80V

Current - Collector Cutoff (Max) :

100μA

Pin Count :

3

Transition Frequency :

1MHz

Vce Saturation (Max) @ Ib, Ic :

2.8V @ 40mA, 2A

REACH SVHC :

No SVHC

Collector Base Voltage (VCBO) :

80V

Operating Temperature :

-55°C~150°C TJ

Halogen Free :

Halogen Free

Collector Emitter Breakdown Voltage :

80V

Max Collector Current :

4A

JESD-609 Code :

e3

Package / Case :

TO-225AA, TO-126-3

Transistor Type :

NPN - Darlington

Emitter Base Voltage (VEBO) :

5V

Published :

2000

Transistor Application :

AMPLIFIER

Peak Reflow Temperature (Cel) :

260