MJE802STU

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Mfr.Part #
MJE802STU
Manufacturer
onsemi
Package / Case
TO-225AA, TO-126-3
Datasheet
Download
Description
TRANS NPN DARL 80V 4A TO126-3
Stock
2,682
In Stock :
2,682

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Mounting Type :
Through Hole
Transistor Type :
NPN - Darlington
Package / Case :
TO-225AA, TO-126-3
Operating Temperature :
150°C TJ
Current - Collector (Ic) (Max) :
4A
Current - Collector Cutoff (Max) :
100μA
Vce Saturation (Max) @ Ib, Ic :
2.5V @ 30mA, 1.5A
DC Current Gain (hFE) (Min) @ Ic, Vce :
750 @ 1.5A 3V
Voltage - Collector Emitter Breakdown (Max) :
80V
Packaging :
Tube
Power - Max :
40W
Base Part Number :
MJE802
Datasheets
MJE802STU
Introducing Transistors - Bipolar (BJT) - Single onsemi MJE802STU from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Package / Case:TO-225AA, TO-126-3, Operating Temperature:150°C TJ, Base Part Number:MJE802, MJE802STU pinout, MJE802STU datasheet PDF, MJE802STU amp .Beyond Transistors - Bipolar (BJT) - Single onsemi MJE802STU ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi MJE802STU


NPN - Darlington 150°C TJ 100μA TO-225AA, TO-126-3 Tube Through Hole

MJE802STU Overview


This device has a DC current gain of 750 @ 1.5A 3V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Detection of Collector Emitter Breakdown at 80V maximal voltage is present.

MJE802STU Features


the DC current gain for this device is 750 @ 1.5A 3V
the vce saturation(Max) is 2.5V @ 30mA, 1.5A


MJE802STU Applications


There are a lot of ON Semiconductor
MJE802STU applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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