MJE802STU
- Mfr.Part #
- MJE802STU
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN DARL 80V 4A TO126-3
- Stock
- 2,682
- In Stock :
- 2,682
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Through Hole
- Transistor Type :
- NPN - Darlington
- Package / Case :
- TO-225AA, TO-126-3
- Operating Temperature :
- 150°C TJ
- Current - Collector (Ic) (Max) :
- 4A
- Current - Collector Cutoff (Max) :
- 100μA
- Vce Saturation (Max) @ Ib, Ic :
- 2.5V @ 30mA, 1.5A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 750 @ 1.5A 3V
- Voltage - Collector Emitter Breakdown (Max) :
- 80V
- Packaging :
- Tube
- Power - Max :
- 40W
- Base Part Number :
- MJE802
- Datasheets
- MJE802STU

NPN - Darlington 150°C TJ 100μA TO-225AA, TO-126-3 Tube Through Hole
MJE802STU Overview
This device has a DC current gain of 750 @ 1.5A 3V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Detection of Collector Emitter Breakdown at 80V maximal voltage is present.
MJE802STU Features
the DC current gain for this device is 750 @ 1.5A 3V
the vce saturation(Max) is 2.5V @ 30mA, 1.5A
MJE802STU Applications
There are a lot of ON Semiconductor
MJE802STU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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