MJE800STU
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- Mfr.Part #
- MJE800STU
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN DARL 60V 4A TO126-3
- Stock
- 46,287
- In Stock ：
- 46,287
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Operating Temperature :
- 150°C TJ
- RoHS Status :
- ROHS3 Compliant
- Voltage - Rated DC :
- 60V
- Factory Lead Time :
- 19 Weeks
- Transition Frequency :
- 2MHz
- Collector Emitter Saturation Voltage :
- 2.5V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Height :
- 11mm
- Mounting Type :
- Through Hole
- Transistor Type :
- NPN - Darlington
- Max Power Dissipation :
- 40W
- Collector Emitter Voltage (VCEO) :
- 60V
- Base Part Number :
- MJE800
- JESD-609 Code :
- e3
- Current - Collector Cutoff (Max) :
- 100μA
- Collector Base Voltage (VCBO) :
- 60V
- Mount :
- Through Hole
- Emitter Base Voltage (VEBO) :
- 5V
- Package / Case :
- TO-225AA, TO-126-3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 750 @ 1.5A 3V
- Current Rating :
- 4A
- Packaging :
- Tube
- Max Breakdown Voltage :
- 60V
- Transistor Element Material :
- SILICON
- Number of Pins :
- 3
- Number of Terminations :
- 3
- Polarity :
- NPN
- Number of Elements :
- 1
- Radiation Hardening :
- No
- Weight :
- 761mg
- Vce Saturation (Max) @ Ib, Ic :
- 2.5V @ 30mA, 1.5A
- Max Collector Current :
- 4A
- Terminal Finish :
- Tin (Sn)
- Published :
- 2001
- hFE Min :
- 700
- Lead Free :
- Lead Free
- Length :
- 8mm
- Collector Emitter Breakdown Voltage :
- 60V
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 week ago)
- Pbfree Code :
- yes
- ECCN Code :
- EAR99
- Element Configuration :
- Single
- Width :
- 3.25mm
- Datasheets
- MJE800STU
NPN - Darlington 150°C TJ 100μA 1 Elements 3 Terminations SILICON TO-225AA, TO-126-3 Tube Through Hole
MJE800STU Overview
DC current gain in this device equals 750 @ 1.5A 3V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 2.5V, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 2.5V @ 30mA, 1.5A.An emitter's base voltage can be kept at 5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 4A current rating.As a result, the part has a transition frequency of 2MHz.Breakdown input voltage is 60V volts.In extreme cases, the collector current can be as low as 4A volts.
MJE800STU Features
the DC current gain for this device is 750 @ 1.5A 3V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 2.5V @ 30mA, 1.5A
the emitter base voltage is kept at 5V
the current rating of this device is 4A
a transition frequency of 2MHz
MJE800STU Applications
There are a lot of ON Semiconductor
MJE800STU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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|---|---|---|---|
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| MJE803STU | onsemi | 26,561 | TRANS NPN DARL 80V 4A TO126-3 |
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