MJE802G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Element Configuration :

Single

Transistor Element Material :

SILICON

Packaging :

Bulk

Collector Emitter Breakdown Voltage :

80V

Current - Collector Cutoff (Max) :

100μA

Number of Elements :

1

Power Dissipation :

40W

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

JESD-609 Code :

e3

ECCN Code :

EAR99

Pin Count :

3

Surface Mount :

No

Operating Temperature :

-55°C~150°C TJ

Current Rating :

4A

Peak Reflow Temperature (Cel) :

260

RoHS Status :

ROHS3 Compliant

Time@Peak Reflow Temperature-Max (s) :

40

Vce Saturation (Max) @ Ib, Ic :

2.5V @ 30mA, 1.5A

Length :

7.74mm

Weight :

4.535924g

Factory Lead Time :

2 Weeks

Polarity :

NPN

Pbfree Code :

yes

Number of Terminations :

3

Width :

2.66mm

Radiation Hardening :

No

Transistor Type :

NPN - Darlington

Transition Frequency :

1MHz

Package / Case :

TO-225AA, TO-126-3

Collector Base Voltage (VCBO) :

80V

Mounting Type :

Through Hole

REACH SVHC :

No SVHC

Max Collector Current :

4A

Additional Feature :

BUILT IN BIAS RESISTOR

Lead Free :

Lead Free

Transistor Application :

AMPLIFIER

DC Current Gain (hFE) (Min) @ Ic, Vce :

750 @ 1.5A 3V

Height :

11.04mm

hFE Min :

100

Max Power Dissipation :

40W

Halogen Free :

Halogen Free

Collector Emitter Voltage (VCEO) :

80V

Collector Emitter Saturation Voltage :

2.5V

Number of Pins :

3

Emitter Base Voltage (VEBO) :

5V

Terminal Finish :

Tin (Sn)

Base Part Number :

MJE802

Published :

2000

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Voltage - Rated DC :

80V