MJE802G
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- Mfr.Part #
- MJE802G
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN DARL 80V 4A TO126
- Stock
- 28,840
- In Stock ：
- 28,840
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Type :
- NPN - Darlington
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- hFE Min :
- 100
- Element Configuration :
- Single
- RoHS Status :
- ROHS3 Compliant
- JESD-609 Code :
- e3
- Additional Feature :
- BUILT IN BIAS RESISTOR
- Width :
- 2.66mm
- REACH SVHC :
- No SVHC
- Peak Reflow Temperature (Cel) :
- 260
- Factory Lead Time :
- 2 Weeks
- Halogen Free :
- Halogen Free
- Pbfree Code :
- yes
- Collector Emitter Breakdown Voltage :
- 80V
- Emitter Base Voltage (VEBO) :
- 5V
- Weight :
- 4.535924g
- Height :
- 11.04mm
- Collector Emitter Voltage (VCEO) :
- 80V
- Terminal Finish :
- Tin (Sn)
- Mounting Type :
- Through Hole
- Pin Count :
- 3
- Packaging :
- Bulk
- Number of Terminations :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Collector Emitter Saturation Voltage :
- 2.5V
- Max Collector Current :
- 4A
- Max Power Dissipation :
- 40W
- Package / Case :
- TO-225AA, TO-126-3
- Operating Temperature :
- -55°C~150°C TJ
- Surface Mount :
- No
- Current Rating :
- 4A
- Radiation Hardening :
- No
- Power Dissipation :
- 40W
- ECCN Code :
- EAR99
- Polarity :
- NPN
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- Published :
- 2000
- Collector Base Voltage (VCBO) :
- 80V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 750 @ 1.5A 3V
- Number of Pins :
- 3
- Voltage - Rated DC :
- 80V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Base Part Number :
- MJE802
- Lead Free :
- Lead Free
- Length :
- 7.74mm
- Vce Saturation (Max) @ Ib, Ic :
- 2.5V @ 30mA, 1.5A
- Transition Frequency :
- 1MHz
- Transistor Application :
- AMPLIFIER
- Current - Collector Cutoff (Max) :
- 100μA
- Datasheets
- MJE802G
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NPN - Darlington -55°C~150°C TJ 100μA 1 Elements 3 Terminations SILICON TO-225AA, TO-126-3 Bulk Through Hole
MJE802G Overview
This device has a DC current gain of 750 @ 1.5A 3V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 2.5V.A VCE saturation (Max) of 2.5V @ 30mA, 1.5A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of 4A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 1MHz.A maximum collector current of 4A volts is possible.
MJE802G Features
the DC current gain for this device is 750 @ 1.5A 3V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 2.5V @ 30mA, 1.5A
the emitter base voltage is kept at 5V
the current rating of this device is 4A
a transition frequency of 1MHz
MJE802G Applications
There are a lot of ON Semiconductor
MJE802G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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|---|---|---|---|
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| MJE803G | onsemi | 1 | TRANS NPN DARL 80V 4A TO126 |
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