MJE802

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Mfr.Part #
MJE802
Manufacturer
STMicroelectronics
Package / Case
TO-225AA, TO-126-3
Datasheet
Download
Description
TRANS NPN DARL 80V 4A SOT32
Stock
5,895
In Stock :
5,895

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - Bipolar (BJT) - Single
Base Part Number :
MJE802
Voltage - Rated DC :
80V
Number of Pins :
3
Polarity :
NPN
Emitter Base Voltage (VEBO) :
5V
Number of Terminations :
3
Transistor Type :
NPN - Darlington
Time@Peak Reflow Temperature-Max (s) :
40
Max Collector Current :
4A
ECCN Code :
EAR99
Operating Temperature :
-55°C~150°C TJ
JESD-609 Code :
e3
Peak Reflow Temperature (Cel) :
260
Surface Mount :
No
Power Dissipation :
40W
REACH SVHC :
No SVHC
DC Current Gain (hFE) (Min) @ Ic, Vce :
750 @ 1.5A 3V
Collector Emitter Voltage (VCEO) :
80V
Terminal Finish :
Tin (Sn)
Transistor Application :
AMPLIFIER
Additional Feature :
BUILT IN BIAS RESISTOR
Radiation Hardening :
No
Published :
2000
Max Power Dissipation :
40W
Pbfree Code :
yes
Mounting Type :
Through Hole
Current Rating :
4A
Transistor Element Material :
SILICON
Collector Emitter Saturation Voltage :
2.5V
Lifecycle Status :
ACTIVE (Last Updated: 1 day ago)
Width :
2.66mm
hFE Min :
100
Current - Collector Cutoff (Max) :
100μA
Element Configuration :
Single
Collector Base Voltage (VCBO) :
80V
Packaging :
Bulk
Factory Lead Time :
2 Weeks
Pin Count :
3
Transition Frequency :
1MHz
Weight :
4.535924g
Lead Free :
Lead Free
Height :
11.04mm
Number of Elements :
1
Collector Emitter Breakdown Voltage :
80V
Vce Saturation (Max) @ Ib, Ic :
2.5V @ 30mA, 1.5A
RoHS Status :
ROHS3 Compliant
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Package / Case :
TO-225AA, TO-126-3
Halogen Free :
Halogen Free
Length :
7.74mm
Datasheets
MJE802
Introducing Transistors - Bipolar (BJT) - Single STMicroelectronics MJE802 from Chip IC,where excellence meets affordability. This product stands out with its Base Part Number:MJE802, Number of Pins:3, Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, Package / Case:TO-225AA, TO-126-3, MJE802 pinout, MJE802 datasheet PDF, MJE802 amp .Beyond Transistors - Bipolar (BJT) - Single STMicroelectronics MJE802 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics MJE802


NPN - Darlington -55°C~150°C TJ 100μA 1 Elements 3 Terminations SILICON TO-225AA, TO-126-3 Bulk Through Hole

MJE802G Overview


This device has a DC current gain of 750 @ 1.5A 3V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 2.5V.A VCE saturation (Max) of 2.5V @ 30mA, 1.5A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of 4A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 1MHz.A maximum collector current of 4A volts is possible.

MJE802G Features


the DC current gain for this device is 750 @ 1.5A 3V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 2.5V @ 30mA, 1.5A
the emitter base voltage is kept at 5V
the current rating of this device is 4A
a transition frequency of 1MHz


MJE802G Applications


There are a lot of ON Semiconductor
MJE802G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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