MJE371G

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Mfr.Part #
MJE371G
Manufacturer
onsemi
Package / Case
TO-225AA, TO-126-3
Datasheet
Download
Description
TRANS PNP 40V 4A TO126
Stock
3,592
In Stock :
3,592

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Collector Emitter Voltage (VCEO) :
40V
Max Collector Current :
4A
Lead Free :
Lead Free
RoHS Status :
ROHS3 Compliant
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
REACH SVHC :
No SVHC
Radiation Hardening :
No
ECCN Code :
EAR99
Number of Terminations :
3
Published :
2000
Operating Temperature :
-65°C~150°C TJ
Element Configuration :
Single
Transistor Element Material :
SILICON
Width :
6.35mm
Packaging :
Bulk
Pbfree Code :
yes
Peak Reflow Temperature (Cel) :
260
Pin Count :
3
Transistor Application :
SWITCHING
Current - Collector Cutoff (Max) :
100μA ICBO
Collector Base Voltage (VCBO) :
40V
Voltage - Rated DC :
-40V
Mounting Type :
Through Hole
Height :
6.35mm
Length :
6.35mm
Factory Lead Time :
2 Weeks
Emitter Base Voltage (VEBO) :
4V
Max Power Dissipation :
40W
Power Dissipation :
40W
Transistor Type :
PNP
Number of Elements :
1
Collector Emitter Breakdown Voltage :
40V
DC Current Gain (hFE) (Min) @ Ic, Vce :
40 @ 1A 1V
Terminal Finish :
Tin (Sn)
Package / Case :
TO-225AA, TO-126-3
Current Rating :
-4A
Time@Peak Reflow Temperature-Max (s) :
40
Number of Pins :
3
Surface Mount :
No
Polarity/Channel Type :
PNP
hFE Min :
40
JESD-609 Code :
e3
Weight :
4.535924g
Lifecycle Status :
ACTIVE (Last Updated: 4 days ago)
Datasheets
MJE371G
Introducing Transistors - Bipolar (BJT) - Single onsemi MJE371G from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Operating Temperature:-65°C~150°C TJ, Mounting Type:Through Hole, Package / Case:TO-225AA, TO-126-3, Number of Pins:3, MJE371G pinout, MJE371G datasheet PDF, MJE371G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi MJE371G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi MJE371G


PNP -65°C~150°C TJ 100μA ICBO 1 Elements 3 Terminations SILICON PNP TO-225AA, TO-126-3 Bulk Through Hole

MJE371G Overview


This device has a DC current gain of 40 @ 1A 1V, which is the ratio between the collector current and the base current.The base voltage of the emitter can be kept at 4V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is -4A.The maximum collector current is 4A volts.

MJE371G Features


the DC current gain for this device is 40 @ 1A 1V
the emitter base voltage is kept at 4V
the current rating of this device is -4A


MJE371G Applications


There are a lot of ON Semiconductor
MJE371G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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