MJE3055TG
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- Mfr.Part #
- MJE3055TG
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN 60V 10A TO220
- Stock
- 14,704
- In Stock ：
- 14,704
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Type :
- NPN
- Emitter Base Voltage (VEBO) :
- 5V
- Number of Pins :
- 3
- Base Part Number :
- MJE3055
- Element Configuration :
- Single
- Lifecycle Status :
- ACTIVE (Last Updated: 2 hours ago)
- Package / Case :
- TO-220-3
- Surface Mount :
- No
- Vce Saturation (Max) @ Ib, Ic :
- 8V @ 3.3A, 10A
- Case Connection :
- COLLECTOR
- Published :
- 2003
- Transition Frequency :
- 2MHz
- Height :
- 15.748mm
- Number of Elements :
- 1
- Collector Emitter Saturation Voltage :
- 1.1V
- Collector Emitter Voltage (VCEO) :
- 60V
- Factory Lead Time :
- 8 Weeks
- Gain Bandwidth Product :
- 2MHz
- Transistor Application :
- SWITCHING
- Collector Base Voltage (VCBO) :
- 70V
- Terminal Finish :
- Tin (Sn)
- Weight :
- 4.535924g
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20 @ 4A 4V
- Polarity/Channel Type :
- NPN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- Length :
- 10.2616mm
- Pbfree Code :
- yes
- Power Dissipation :
- 75W
- Max Collector Current :
- 10A
- Max Power Dissipation :
- 75W
- ECCN Code :
- EAR99
- Pin Count :
- 3
- Current - Collector Cutoff (Max) :
- 700µA
- REACH SVHC :
- No SVHC
- RoHS Status :
- ROHS3 Compliant
- Number of Terminations :
- 3
- hFE Min :
- 20
- Width :
- 4.826mm
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Operating Temperature :
- -55°C~150°C TJ
- JESD-609 Code :
- e3
- Frequency :
- 2MHz
- Collector Emitter Breakdown Voltage :
- 60V
- Peak Reflow Temperature (Cel) :
- 260
- Mounting Type :
- Through Hole
- Current Rating :
- 10A
- Packaging :
- Tube
- Voltage - Rated DC :
- 60V
- Lead Free :
- Lead Free
- Radiation Hardening :
- No
- Datasheets
- MJE3055TG
NPN -55°C~150°C TJ 700μA 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole
MJE3055TG Overview
This device has a DC current gain of 20 @ 4A 4V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 1.1V.A VCE saturation (Max) of 8V @ 3.3A, 10A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of 10A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 2MHz.A maximum collector current of 10A volts is possible.
MJE3055TG Features
the DC current gain for this device is 20 @ 4A 4V
a collector emitter saturation voltage of 1.1V
the vce saturation(Max) is 8V @ 3.3A, 10A
the emitter base voltage is kept at 5V
the current rating of this device is 10A
a transition frequency of 2MHz
MJE3055TG Applications
There are a lot of ON Semiconductor
MJE3055TG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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