MJE344G

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Mfr.Part #
MJE344G
Manufacturer
onsemi
Package / Case
TO-225AA, TO-126-3
Datasheet
Download
Description
TRANS NPN 200V 0.5A TO126
Stock
19,344
In Stock :
19,344

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Transition Frequency :
15MHz
Weight :
4.535924g
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Package / Case :
TO-225AA, TO-126-3
JESD-609 Code :
e3
hFE Min :
30
Pin Count :
3
Number of Terminations :
3
Number of Elements :
1
DC Current Gain (hFE) (Min) @ Ic, Vce :
30 @ 50mA 10V
Element Configuration :
Single
Mounting Type :
Through Hole
Vce Saturation (Max) @ Ib, Ic :
1V @ 5mA, 50mA
Length :
6.35mm
Terminal Finish :
Tin (Sn)
RoHS Status :
ROHS3 Compliant
Surface Mount :
No
Transistor Type :
NPN
Time@Peak Reflow Temperature-Max (s) :
40
Number of Pins :
3
Transistor Application :
AMPLIFIER
Emitter Base Voltage (VEBO) :
5V
Current Rating :
500mA
Factory Lead Time :
2 Weeks
Collector Base Voltage (VCBO) :
200V
REACH SVHC :
No SVHC
Current - Collector Cutoff (Max) :
1mA
Width :
6.35mm
Frequency :
15MHz
Max Power Dissipation :
20W
Peak Reflow Temperature (Cel) :
260
Lead Free :
Lead Free
Voltage - Rated DC :
120V
Power Dissipation :
20W
Published :
2005
Packaging :
Bulk
Operating Temperature :
-65°C~150°C TJ
Collector Emitter Breakdown Voltage :
200V
Polarity/Channel Type :
NPN
Lifecycle Status :
ACTIVE (Last Updated: 1 day ago)
Collector Emitter Voltage (VCEO) :
200V
Pbfree Code :
yes
Gain Bandwidth Product :
15MHz
Max Collector Current :
500mA
Height :
6.35mm
ECCN Code :
EAR99
Transistor Element Material :
SILICON
Radiation Hardening :
No
Collector Emitter Saturation Voltage :
1V
Datasheets
MJE344G
Introducing Transistors - Bipolar (BJT) - Single onsemi MJE344G from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-225AA, TO-126-3, Number of Terminations:3, Mounting Type:Through Hole, Number of Pins:3, Operating Temperature:-65°C~150°C TJ, MJE344G pinout, MJE344G datasheet PDF, MJE344G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi MJE344G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi MJE344G


NPN -65°C~150°C TJ 1mA 1 Elements 3 Terminations SILICON NPN TO-225AA, TO-126-3 Bulk Through Hole

MJE344G Overview


This device has a DC current gain of 30 @ 50mA 10V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 1V allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 5V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 500mA.In this part, there is a transition frequency of 15MHz.The maximum collector current is 500mA volts.

MJE344G Features


the DC current gain for this device is 30 @ 50mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 5mA, 50mA
the emitter base voltage is kept at 5V
the current rating of this device is 500mA
a transition frequency of 15MHz


MJE344G Applications


There are a lot of ON Semiconductor
MJE344G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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