MJE3055T

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Contact Plating :

Tin

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Number of Terminations :

3

Transition Frequency :

2MHz

hFE Min :

20

Factory Lead Time :

8 Weeks

Voltage - Rated DC :

60V

Transistor Application :

SWITCHING

Operating Temperature :

150°C TJ

Mounting Type :

Through Hole

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current Rating :

10A

Frequency :

2MHz

Packaging :

Tube

Vce Saturation (Max) @ Ib, Ic :

8V @ 3.3A, 10A

Number of Elements :

1

Length :

10.4mm

Number of Pins :

3

Transistor Element Material :

SILICON

Height :

9.15mm

Polarity/Channel Type :

NPN

Width :

4.6mm

Weight :

4.535924g

Package / Case :

TO-220-3

Mount :

Through Hole

Lead Free :

Lead Free

Current - Collector Cutoff (Max) :

700µA

JESD-609 Code :

e3

Transistor Type :

NPN

Base Part Number :

MJE305

Collector Base Voltage (VCBO) :

70V

Max Collector Current :

10A

Gain Bandwidth Product :

2MHz

VCEsat-Max :

8 V

Collector Emitter Saturation Voltage :

1.1V

Max Power Dissipation :

75W

Power Dissipation :

75W

Collector Emitter Voltage (VCEO) :

60V

Pin Count :

3

Radiation Hardening :

No

DC Current Gain (hFE) (Min) @ Ic, Vce :

20 @ 4A 4V

Element Configuration :

Single

Collector Emitter Breakdown Voltage :

60V

Emitter Base Voltage (VEBO) :

5V

REACH SVHC :

No SVHC