MJE3055TTU
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- Mfr.Part #
- MJE3055TTU
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN 60V 10A TO220-3
- Stock
- 2,747
- In Stock ：
- 2,747
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Length :
- 9.9mm
- Number of Pins :
- 3
- Collector Base Voltage (VCBO) :
- 70V
- Element Configuration :
- Single
- Polarity/Channel Type :
- NPN
- Power Dissipation :
- 600mW
- Transistor Application :
- SWITCHING
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 week ago)
- Lead Free :
- Lead Free
- Published :
- 2001
- JESD-609 Code :
- e3
- Current - Collector Cutoff (Max) :
- 700µA
- Packaging :
- Tube
- Transition Frequency :
- 2MHz
- Number of Terminations :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current Rating :
- 10A
- Mounting Type :
- Through Hole
- hFE Min :
- 20
- Max Power Dissipation :
- 75W
- Voltage - Rated DC :
- 60V
- Terminal Finish :
- Tin (Sn)
- Max Breakdown Voltage :
- 60V
- Operating Temperature :
- 150°C TJ
- Transistor Type :
- NPN
- Pbfree Code :
- yes
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20 @ 4A 4V
- ECCN Code :
- EAR99
- Transistor Element Material :
- SILICON
- Collector Emitter Voltage (VCEO) :
- 60V
- Max Collector Current :
- 10A
- Mount :
- Through Hole
- Base Part Number :
- MJE3055
- Power - Max :
- 75W
- REACH SVHC :
- No SVHC
- Gain Bandwidth Product :
- 2MHz
- Number of Elements :
- 1
- Collector Emitter Breakdown Voltage :
- 525V
- Height :
- 14.2mm
- Frequency :
- 2MHz
- Package / Case :
- TO-220-3
- Emitter Base Voltage (VEBO) :
- 5V
- Weight :
- 1.8g
- Collector Emitter Saturation Voltage :
- 1.1V
- Width :
- 4.5mm
- Radiation Hardening :
- No
- Vce Saturation (Max) @ Ib, Ic :
- 8V @ 3.3A, 10A
- RoHS Status :
- ROHS3 Compliant
- Datasheets
- MJE3055TTU
NPN 150°C TJ 700μA 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole
MJE3055TTU Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 20 @ 4A 4V.With a collector emitter saturation voltage of 1.1V, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 8V @ 3.3A, 10A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 10A.A transition frequency of 2MHz is present in the part.There is a breakdown input voltage of 60V volts that it can take.Collector current can be as low as 10A volts at its maximum.
MJE3055TTU Features
the DC current gain for this device is 20 @ 4A 4V
a collector emitter saturation voltage of 1.1V
the vce saturation(Max) is 8V @ 3.3A, 10A
the emitter base voltage is kept at 5V
the current rating of this device is 10A
a transition frequency of 2MHz
MJE3055TTU Applications
There are a lot of ON Semiconductor
MJE3055TTU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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