MJE3439G

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Mfr.Part #
MJE3439G
Manufacturer
onsemi
Package / Case
TO-225AA, TO-126-3
Datasheet
Download
Description
TRANS NPN 350V 0.3A TO126
Stock
126
In Stock :
126

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Number of Terminations :
3
Height :
6.35mm
Pin Count :
3
Published :
2005
Terminal Finish :
Tin (Sn)
hFE Min :
30
RoHS Status :
ROHS3 Compliant
Time@Peak Reflow Temperature-Max (s) :
40
Polarity/Channel Type :
NPN
Operating Temperature :
-65°C~150°C TJ
Mounting Type :
Through Hole
Peak Reflow Temperature (Cel) :
260
Collector Base Voltage (VCBO) :
450V
Transistor Type :
NPN
Frequency :
15MHz
Lead Free :
Lead Free
Radiation Hardening :
No
Vce Saturation (Max) @ Ib, Ic :
500mV @ 4mA, 50mA
Max Collector Current :
300mA
Terminal Position :
Single
Number of Pins :
3
Width :
6.35mm
Voltage - Rated DC :
350V
Package / Case :
TO-225AA, TO-126-3
Emitter Base Voltage (VEBO) :
5V
Pbfree Code :
yes
Configuration :
Single
Collector Emitter Breakdown Voltage :
350V
Number of Elements :
1
Gain Bandwidth Product :
15MHz
JESD-609 Code :
e3
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Transition Frequency :
15MHz
DC Current Gain (hFE) (Min) @ Ic, Vce :
15 @ 20mA 10V
Transistor Element Material :
SILICON
Surface Mount :
No
Packaging :
Bulk
Collector Emitter Voltage (VCEO) :
350V
Max Power Dissipation :
15W
Current Rating :
300mA
Length :
6.35mm
REACH SVHC :
No SVHC
Collector Emitter Saturation Voltage :
500mV
Lifecycle Status :
ACTIVE (Last Updated: 1 day ago)
ECCN Code :
EAR99
Factory Lead Time :
2 Weeks
Weight :
4.535924g
Power Dissipation :
15W
Current - Collector Cutoff (Max) :
20μA
Datasheets
MJE3439G
Introducing Transistors - Bipolar (BJT) - Single onsemi MJE3439G from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Operating Temperature:-65°C~150°C TJ, Mounting Type:Through Hole, Number of Pins:3, Package / Case:TO-225AA, TO-126-3, MJE3439G pinout, MJE3439G datasheet PDF, MJE3439G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi MJE3439G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi MJE3439G


NPN -65°C~150°C TJ 20μA 1 Elements 3 Terminations SILICON NPN TO-225AA, TO-126-3 Bulk Through Hole

MJE3439G Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 15 @ 20mA 10V.The collector emitter saturation voltage is 500mV, which allows for maximum design flexibility.When VCE saturation is 500mV @ 4mA, 50mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 300mA.In the part, the transition frequency is 15MHz.A maximum collector current of 300mA volts can be achieved.

MJE3439G Features


the DC current gain for this device is 15 @ 20mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 4mA, 50mA
the emitter base voltage is kept at 5V
the current rating of this device is 300mA
a transition frequency of 15MHz


MJE3439G Applications


There are a lot of ON Semiconductor
MJE3439G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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