MJE3439G
- Mfr.Part #
- MJE3439G
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN 350V 0.3A TO126
- Stock
- 126
- In Stock :
- 126
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Terminations :
- 3
- Height :
- 6.35mm
- Pin Count :
- 3
- Published :
- 2005
- Terminal Finish :
- Tin (Sn)
- hFE Min :
- 30
- RoHS Status :
- ROHS3 Compliant
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Polarity/Channel Type :
- NPN
- Operating Temperature :
- -65°C~150°C TJ
- Mounting Type :
- Through Hole
- Peak Reflow Temperature (Cel) :
- 260
- Collector Base Voltage (VCBO) :
- 450V
- Transistor Type :
- NPN
- Frequency :
- 15MHz
- Lead Free :
- Lead Free
- Radiation Hardening :
- No
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 4mA, 50mA
- Max Collector Current :
- 300mA
- Terminal Position :
- Single
- Number of Pins :
- 3
- Width :
- 6.35mm
- Voltage - Rated DC :
- 350V
- Package / Case :
- TO-225AA, TO-126-3
- Emitter Base Voltage (VEBO) :
- 5V
- Pbfree Code :
- yes
- Configuration :
- Single
- Collector Emitter Breakdown Voltage :
- 350V
- Number of Elements :
- 1
- Gain Bandwidth Product :
- 15MHz
- JESD-609 Code :
- e3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transition Frequency :
- 15MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 15 @ 20mA 10V
- Transistor Element Material :
- SILICON
- Surface Mount :
- No
- Packaging :
- Bulk
- Collector Emitter Voltage (VCEO) :
- 350V
- Max Power Dissipation :
- 15W
- Current Rating :
- 300mA
- Length :
- 6.35mm
- REACH SVHC :
- No SVHC
- Collector Emitter Saturation Voltage :
- 500mV
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- ECCN Code :
- EAR99
- Factory Lead Time :
- 2 Weeks
- Weight :
- 4.535924g
- Power Dissipation :
- 15W
- Current - Collector Cutoff (Max) :
- 20μA
- Datasheets
- MJE3439G
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NPN -65°C~150°C TJ 20μA 1 Elements 3 Terminations SILICON NPN TO-225AA, TO-126-3 Bulk Through Hole
MJE3439G Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 15 @ 20mA 10V.The collector emitter saturation voltage is 500mV, which allows for maximum design flexibility.When VCE saturation is 500mV @ 4mA, 50mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 300mA.In the part, the transition frequency is 15MHz.A maximum collector current of 300mA volts can be achieved.
MJE3439G Features
the DC current gain for this device is 15 @ 20mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 4mA, 50mA
the emitter base voltage is kept at 5V
the current rating of this device is 300mA
a transition frequency of 15MHz
MJE3439G Applications
There are a lot of ON Semiconductor
MJE3439G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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