MJD44H11T4-A

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Mfr.Part #
MJD44H11T4-A
Manufacturer
STMicroelectronics
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
TRANS NPN 80V 8A DPAK
Stock
54,622
In Stock :
54,622

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - Bipolar (BJT) - Single
Transistor Element Material :
SILICON
Mounting Type :
Surface Mount
Max Breakdown Voltage :
80V
Current - Collector Cutoff (Max) :
10μA
JEDEC-95 Code :
TO-252AA
Transistor Type :
NPN
Number of Terminations :
2
Mount :
Surface Mount
Terminal Form :
Gull wing
Polarity/Channel Type :
NPN
Packaging :
Cut Tape (CT)
Collector Emitter Breakdown Voltage :
80V
Configuration :
Single
Operating Temperature :
150°C TJ
DC Current Gain (hFE) (Min) @ Ic, Vce :
40 @ 4A 1V
RoHS Status :
ROHS3 Compliant
Terminal Position :
Single
Time@Peak Reflow Temperature-Max (s) :
30
Power Dissipation :
20W
JESD-30 Code :
R-PSSO-G2
Number of Elements :
1
ECCN Code :
EAR99
JESD-609 Code :
e3
Base Part Number :
MJD44
Transistor Application :
SWITCHING
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Pin Count :
3
Max Collector Current :
8A
Number of Pins :
3
Peak Reflow Temperature (Cel) :
260
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Collector Emitter Voltage (VCEO) :
80V
Max Power Dissipation :
20W
Terminal Finish :
Matte Tin (Sn) - annealed
Emitter Base Voltage (VEBO) :
5V
Case Connection :
COLLECTOR
Radiation Hardening :
No
Lead Free :
Lead Free
Vce Saturation (Max) @ Ib, Ic :
1V @ 400mA, 8A
Datasheets
MJD44H11T4-A
Introducing Transistors - Bipolar (BJT) - Single STMicroelectronics MJD44H11T4-A from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Number of Terminations:2, Operating Temperature:150°C TJ, Base Part Number:MJD44, Number of Pins:3, Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, MJD44H11T4-A pinout, MJD44H11T4-A datasheet PDF, MJD44H11T4-A amp .Beyond Transistors - Bipolar (BJT) - Single STMicroelectronics MJD44H11T4-A ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics MJD44H11T4-A


NPN 150°C TJ 10μA 1 Elements 2 Terminations SILICON NPN TO-252-3, DPak (2 Leads + Tab), SC-63 Cut Tape (CT) Surface Mount

MJD44H11T4-A Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 40 @ 4A 1V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1V @ 400mA, 8A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.There is a breakdown input voltage of 80V volts that it can take.Collector current can be as low as 8A volts at its maximum.

MJD44H11T4-A Features


the DC current gain for this device is 40 @ 4A 1V
the vce saturation(Max) is 1V @ 400mA, 8A
the emitter base voltage is kept at 5V


MJD44H11T4-A Applications


There are a lot of STMicroelectronics
MJD44H11T4-A applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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