MJD42CT4G
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- Mfr.Part #
- MJD42CT4G
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS PNP 100V 6A DPAK
- Stock
- 27,409
- In Stock ：
- 27,409
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Breakdown Voltage :
- 100V
- Terminal Form :
- Gull wing
- Base Part Number :
- MJD42
- Gain Bandwidth Product :
- 3MHz
- Contact Plating :
- Tin
- Lead Free :
- Lead Free
- JESD-30 Code :
- R-PSSO-G2
- Pbfree Code :
- yes
- ECCN Code :
- EAR99
- Surface Mount :
- yes
- Case Connection :
- COLLECTOR
- Collector Base Voltage (VCBO) :
- 100V
- Transistor Type :
- PNP
- Length :
- 6.73mm
- Factory Lead Time :
- 8 Weeks
- Lifecycle Status :
- ACTIVE (Last Updated: 10 hours ago)
- Collector Emitter Voltage (VCEO) :
- 100V
- hFE Min :
- 30
- Transistor Application :
- SWITCHING
- Frequency :
- 3MHz
- Max Breakdown Voltage :
- 100V
- Operating Temperature :
- -65°C~150°C TJ
- REACH SVHC :
- No SVHC
- Transistor Element Material :
- SILICON
- Voltage - Rated DC :
- -100V
- Peak Reflow Temperature (Cel) :
- 260
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tape and Reel (TR)
- Pin Count :
- 3
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Radiation Hardening :
- No
- Current Rating :
- -6A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 15 @ 3A 4V
- Current - Collector Cutoff (Max) :
- 50μA
- JESD-609 Code :
- e3
- Power Dissipation :
- 1.75W
- Number of Elements :
- 1
- Number of Pins :
- 3
- Polarity/Channel Type :
- PNP
- Published :
- 2002
- Max Collector Current :
- 6A
- Weight :
- 4.535924g
- Height :
- 2.38mm
- Transition Frequency :
- 3MHz
- RoHS Status :
- ROHS3 Compliant
- Number of Terminations :
- 2
- Mounting Type :
- Surface Mount
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 600mA, 6A
- Emitter Base Voltage (VEBO) :
- 5V
- Width :
- 6.22mm
- Collector Emitter Saturation Voltage :
- 1.5V
- Element Configuration :
- Single
- Max Power Dissipation :
- 20W
- Datasheets
- MJD42CT4G
MJD42CT4G Documents
PNP -65°C~150°C TJ 50μA 1 Elements 2 Terminations SILICON PNP TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
MJD42CT4G Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 15 @ 3A 4V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 1.5V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1.5V @ 600mA, 6A.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is -6A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 3MHz.The breakdown input voltage is 100V volts.Single BJT transistor is possible to have a collector current as low as 6A volts at Single BJT transistors maximum.
MJD42CT4G Features
the DC current gain for this device is 15 @ 3A 4V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 600mA, 6A
the emitter base voltage is kept at 5V
the current rating of this device is -6A
a transition frequency of 3MHz
MJD42CT4G Applications
There are a lot of ON Semiconductor
MJD42CT4G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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