MDS800

Manufacturer :

Microsemi

Product Category :

Transistors - Bipolar (BJT) - RF

Terminal Finish :

TIN LEAD

RoHS Status :

RoHS Compliant

Polarity/Channel Type :

NPN

Number of Pins :

3

Collector Emitter Voltage (VCEO) :

65V

Max Power Dissipation :

1.458kW

Operating Temperature :

200°C TJ

ECCN Code :

EAR99

Published :

2012

Max Collector Current :

60A

Terminal Position :

Dual

Terminal Form :

Flat

Transistor Type :

NPN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Pin Count :

2

Transistor Application :

AMPLIFIER

Number of Terminations :

2

Gain :

8.6dB

DC Current Gain (hFE) (Min) @ Ic, Vce :

20 @ 1A 5V

Radiation Hardening :

No

Configuration :

Single

JESD-30 Code :

R-CDFM-F2

Transistor Element Material :

SILICON

Power - Max :

1458W

Max Frequency :

1.09GHz

Collector Emitter Breakdown Voltage :

65V

Package / Case :

55ST-1

JESD-609 Code :

e0

Frequency - Transition :

1.09GHz

Mount :

Chassis Mount, Screw

Highest Frequency Band :

L B

Pbfree Code :

No

Packaging :

Bulk

Mounting Type :

Chassis Mount