MDS800

Manufacturer :

Microsemi

Product Category :

Transistors - Bipolar (BJT) - RF

Pbfree Code :

No

Number of Pins :

3

Published :

2012

Max Frequency :

1.09GHz

Max Collector Current :

60A

Power - Max :

1458W

Terminal Finish :

TIN LEAD

Packaging :

Bulk

Transistor Element Material :

SILICON

JESD-30 Code :

R-CDFM-F2

Number of Elements :

1

Collector Emitter Breakdown Voltage :

65V

Terminal Form :

Flat

DC Current Gain (hFE) (Min) @ Ic, Vce :

20 @ 1A 5V

ECCN Code :

EAR99

Polarity/Channel Type :

NPN

Mounting Type :

Chassis Mount

Terminal Position :

Dual

Highest Frequency Band :

L B

Frequency - Transition :

1.09GHz

Configuration :

Single

Gain :

8.6dB

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

AMPLIFIER

Max Power Dissipation :

1.458kW

Collector Emitter Voltage (VCEO) :

65V

Operating Temperature :

200°C TJ

Pin Count :

2

Number of Terminations :

2

Package / Case :

55ST-1

Transistor Type :

NPN

Radiation Hardening :

No

JESD-609 Code :

e0

Mount :

Chassis Mount, Screw

RoHS Status :

RoHS Compliant