MDS70

Manufacturer :

Microsemi

Product Category :

Transistors - Bipolar (BJT) - RF

Transistor Element Material :

SILICON

Power - Max :

225W

Polarity/Channel Type :

NPN

Max Power Dissipation :

225W

Operating Temperature :

200°C TJ

Max Collector Current :

5A

Number of Pins :

3

Emitter Base Voltage (VEBO) :

3.5V

Mount :

Chassis Mount, Screw

Package / Case :

55CX

Radiation Hardening :

No

Highest Frequency Band :

L B

Terminal Form :

Flat

ECCN Code :

EAR99

Number of Terminations :

2

Collector Emitter Breakdown Voltage :

65V

JESD-30 Code :

R-CDFM-F2

Gain :

10.3dB ~ 11.65dB

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Dual

DC Current Gain (hFE) (Min) @ Ic, Vce :

20 @ 500mA 5V

Packaging :

Bulk

Configuration :

Single

Pin Count :

2

Case Connection :

Base

Mounting Type :

Chassis Mount

Collector Emitter Voltage (VCEO) :

65V

Number of Elements :

1

Frequency - Transition :

1.03GHz~1.09GHz

RoHS Status :

RoHS Compliant

Transistor Type :

NPN