KSD569YTU
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- Mfr.Part #
- KSD569YTU
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN 80V 7A TO220-3
- Stock
- 41,744
- In Stock ：
- 41,744
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 3A 1V
- Supplier Device Package :
- TO-220-3
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Transistor Type :
- NPN
- Power - Max :
- 1.5W
- Packaging :
- Tube
- Mounting Type :
- Through Hole
- Current - Collector (Ic) (Max) :
- 7A
- Package / Case :
- TO-220-3
- Voltage - Collector Emitter Breakdown (Max) :
- 80V
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 500mA, 5A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- 150°C TJ
- Datasheets
- KSD569YTU
NPN 150°C TJ 10μA ICBO TO-220-3 Tube Through Hole
KSD569YTU Overview
DC current gain in this device equals 100 @ 3A 1V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 500mA, 5A.Product comes in TO-220-3 supplier package.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.
KSD569YTU Features
the DC current gain for this device is 100 @ 3A 1V
the vce saturation(Max) is 500mV @ 500mA, 5A
the supplier device package of TO-220-3
KSD569YTU Applications
There are a lot of ON Semiconductor
KSD569YTU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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