KSD560YTU

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

hFE Min :

2000

Emitter Base Voltage (VEBO) :

7V

JEDEC-95 Code :

TO-220AB

Collector Emitter Voltage (VCEO) :

100V

Current Rating :

5A

Transistor Element Material :

SILICON

Continuous Collector Current :

5A

Mounting Type :

Through Hole

ECCN Code :

EAR99

Collector Emitter Saturation Voltage :

1.5V

Package / Case :

TO-220-3

Terminal Finish :

Tin (Sn)

Lead Free :

Lead Free

Collector Emitter Breakdown Voltage :

100V

RoHS Status :

ROHS3 Compliant

Collector Base Voltage (VCBO) :

150V

Transistor Type :

NPN - Darlington

Element Configuration :

Single

Number of Pins :

3

Base Part Number :

KSD560

DC Current Gain (hFE) (Min) @ Ic, Vce :

5000 @ 3A 2V

Qualification Status :

Not Qualified

Number of Terminations :

3

Packaging :

Tube

Pbfree Code :

yes

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Polarity :

NPN

Mount :

Through Hole

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Operating Temperature :

150°C TJ

Max Collector Current :

5A

Weight :

1.8g

Factory Lead Time :

4 Weeks

Voltage - Rated DC :

100V

Max Power Dissipation :

1.5W

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Current - Collector Cutoff (Max) :

1μA ICBO

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

AMPLIFIER

Published :

2000

JESD-609 Code :

e3

Vce Saturation (Max) @ Ib, Ic :

1.5V @ 3mA, 3A

Number of Elements :

1