KSB834WYTM
- Mfr.Part #
- KSB834WYTM
- Manufacturer
- onsemi
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- TRANS PNP 60V 3A D2PAK
- Stock
- 8,743
- In Stock :
- 8,743
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- JESD-609 Code :
- e3
- Terminal Finish :
- Tin (Sn)
- Operating Temperature :
- 150°C TJ
- Base Part Number :
- KSB834
- Max Breakdown Voltage :
- 60V
- Reach Compliance Code :
- not_compliant
- Lead Free :
- Lead Free
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- JESD-30 Code :
- R-PSSO-G2
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 300mA, 3A
- Emitter Base Voltage (VEBO) :
- -7V
- Pbfree Code :
- yes
- Transistor Application :
- AMPLIFIER
- Frequency :
- 9MHz
- Collector Emitter Voltage (VCEO) :
- 60V
- Collector Emitter Breakdown Voltage :
- 60V
- Gain Bandwidth Product :
- 9MHz
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- hFE Min :
- 60
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Factory Lead Time :
- 4 Weeks
- Polarity/Channel Type :
- PNP
- RoHS Status :
- ROHS3 Compliant
- Packaging :
- Tape and Reel (TR)
- Published :
- 2014
- Number of Elements :
- 1
- ECCN Code :
- EAR99
- Mounting Type :
- Surface Mount
- Transition Frequency :
- 9MHz
- Number of Pins :
- 3
- Max Collector Current :
- 3A
- Voltage - Rated DC :
- -60V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Mount :
- Surface Mount
- Current Rating :
- -3A
- Qualification Status :
- Not Qualified
- Element Configuration :
- Single
- Number of Terminations :
- 2
- Weight :
- 1.31247g
- Transistor Element Material :
- SILICON
- Transistor Type :
- PNP
- Power Dissipation :
- 1.5W
- Max Power Dissipation :
- 1.5W
- Collector Emitter Saturation Voltage :
- -500mV
- Current - Collector Cutoff (Max) :
- 100μA ICBO
- Terminal Form :
- Gull wing
- Collector Base Voltage (VCBO) :
- -60V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 5mA 5V
- Datasheets
- KSB834WYTM

PNP 150°C TJ 100μA ICBO 1 Elements 2 Terminations SILICON PNP TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Tape & Reel (TR) Surface Mount
KSB834WYTM Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 5mA 5V.With a collector emitter saturation voltage of -500mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1V @ 300mA, 3A.If the emitter base voltage is kept at -7V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -3A.A transition frequency of 9MHz is present in the part.There is a breakdown input voltage of 60V volts that it can take.Collector current can be as low as 3A volts at its maximum.
KSB834WYTM Features
the DC current gain for this device is 100 @ 5mA 5V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 1V @ 300mA, 3A
the emitter base voltage is kept at -7V
the current rating of this device is -3A
a transition frequency of 9MHz
KSB834WYTM Applications
There are a lot of ON Semiconductor
KSB834WYTM applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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