KSB811OTA
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- Mfr.Part #
- KSB811OTA
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 Short Body
- Datasheet
- Download
- Description
- TRANS PNP 25V 1A TO92S
- Stock
- 45,430
- In Stock ：
- 45,430
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Packaging :
- Tape and Box (TB)
- Transistor Type :
- PNP
- Mounting Type :
- Through Hole
- Base Part Number :
- KSB811
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power - Max :
- 350mW
- Operating Temperature :
- 150°C TJ
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 100mA, 1A
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Voltage - Collector Emitter Breakdown (Max) :
- 25V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 70 @ 100mA 1V
- Package / Case :
- TO-226-3, TO-92-3 Short Body
- Frequency - Transition :
- 110MHz
- Current - Collector (Ic) (Max) :
- 1A
- Datasheets
- KSB811OTA
PNP 150°C TJ 100nA ICBO TO-226-3, TO-92-3 Short Body Tape & Box (TB) Through Hole
KSB811OTA Overview
In this device, the DC current gain is 70 @ 100mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 100mA, 1A.The device exhibits a collector-emitter breakdown at 25V.
KSB811OTA Features
the DC current gain for this device is 70 @ 100mA 1V
the vce saturation(Max) is 500mV @ 100mA, 1A
KSB811OTA Applications
There are a lot of ON Semiconductor
KSB811OTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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