KSB811YTA

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Mfr.Part #
KSB811YTA
Manufacturer
Fairchild Semiconductor
Package / Case
TO-226-3, TO-92-3 Short Body
Datasheet
Download
Description
TRANS PNP 25V 1A TO92S
Stock
39,981
In Stock :
39,981

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Manufacturer :
Fairchild Semiconductor
Product Category :
Transistors - Bipolar (BJT) - Single
Transistor Application :
AMPLIFIER
Pin Count :
3
Time@Peak Reflow Temperature-Max (s) :
Not Applicable
Transistor Type :
PNP
Qualification Status :
COMMERCIAL
Package / Case :
TO-226-3, TO-92-3 Short Body
Terminal Position :
Single
Transistor Element Material :
SILICON
Peak Reflow Temperature (Cel) :
Not Applicable
Vce Saturation (Max) @ Ib, Ic :
500mV @ 100mA, 1A
Number of Elements :
1
Surface Mount :
No
Operating Temperature :
150°C TJ
Transition Frequency :
110MHz
Current - Collector Cutoff (Max) :
100nA ICBO
Power - Max :
350mW
Pbfree Code :
yes
JESD-30 Code :
R-PSIP-T3
Mounting Type :
Through Hole
Number of Terminations :
3
Packaging :
Tape and Box (TB)
JESD-609 Code :
e3
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Current - Collector (Ic) (Max) :
1A
Configuration :
Single
Frequency - Transition :
110MHz
Terminal Finish :
MATTE TIN
Polarity/Channel Type :
PNP
Voltage - Collector Emitter Breakdown (Max) :
25V
DC Current Gain (hFE) (Min) @ Ic, Vce :
120 @ 100mA 1V
RoHS Status :
ROHS3 Compliant
Datasheets
KSB811YTA
Introducing Transistors - Bipolar (BJT) - Single Fairchild Semiconductor KSB811YTA from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-226-3, TO-92-3 Short Body, Operating Temperature:150°C TJ, Mounting Type:Through Hole, Number of Terminations:3, KSB811YTA pinout, KSB811YTA datasheet PDF, KSB811YTA amp .Beyond Transistors - Bipolar (BJT) - Single Fairchild Semiconductor KSB811YTA ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Fairchild Semiconductor KSB811YTA


PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 Short Body Tape & Box (TB) Through Hole

KSB811YTA Overview


This device has a DC current gain of 120 @ 100mA 1V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 500mV @ 100mA, 1A means Ic has reached its maximum value(saturated).As you can see, the part has a transition frequency of 110MHz.Collector Emitter Breakdown occurs at 25VV - Maximum voltage.

KSB811YTA Features


the DC current gain for this device is 120 @ 100mA 1V
the vce saturation(Max) is 500mV @ 100mA, 1A
a transition frequency of 110MHz


KSB811YTA Applications


There are a lot of Rochester Electronics, LLC
KSB811YTA applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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