KSB810YTA
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- Mfr.Part #
- KSB810YTA
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 Short Body
- Datasheet
- Download
- Description
- TRANS PNP 25V 0.7A TO92S
- Stock
- 8,423
- In Stock ：
- 8,423
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 100mA 1V
- Frequency - Transition :
- 160MHz
- Packaging :
- Tape and Box (TB)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power - Max :
- 350mW
- Transistor Type :
- PNP
- Current - Collector (Ic) (Max) :
- 700mA
- Operating Temperature :
- 150°C TJ
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Package / Case :
- TO-226-3, TO-92-3 Short Body
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 70mA, 700mA
- Mounting Type :
- Through Hole
- Voltage - Collector Emitter Breakdown (Max) :
- 25V
- Supplier Device Package :
- TO-92S
- Datasheets
- KSB810YTA
PNP 150°C TJ 100nA ICBO TO-226-3, TO-92-3 Short Body Tape & Box (TB) Through Hole
KSB810YTA Overview
This device has a DC current gain of 120 @ 100mA 1V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Single BJT transistor comes in a supplier device package of TO-92S.Detection of Collector Emitter Breakdown at 25V maximal voltage is present.
KSB810YTA Features
the DC current gain for this device is 120 @ 100mA 1V
the vce saturation(Max) is 400mV @ 70mA, 700mA
the supplier device package of TO-92S
KSB810YTA Applications
There are a lot of ON Semiconductor
KSB810YTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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