KSB811GBU
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- Mfr.Part #
- KSB811GBU
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 Short Body
- Datasheet
- Download
- Description
- TRANS PNP 25V 1A TO92S
- Stock
- 44,740
- In Stock ：
- 44,740
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 100mA 1V
- Frequency - Transition :
- 110MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Mounting Type :
- Through Hole
- Transistor Type :
- PNP
- Base Part Number :
- KSB811
- Supplier Device Package :
- TO-92S
- Power - Max :
- 350mW
- Operating Temperature :
- 150°C TJ
- Voltage - Collector Emitter Breakdown (Max) :
- 25V
- Packaging :
- Bulk
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 100mA, 1A
- Package / Case :
- TO-226-3, TO-92-3 Short Body
- Current - Collector (Ic) (Max) :
- 1A
- Datasheets
- KSB811GBU
PNP 150°C TJ 100nA ICBO TO-226-3, TO-92-3 Short Body Bulk Through Hole
KSB811GBU Overview
This device has a DC current gain of 200 @ 100mA 1V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 500mV @ 100mA, 1A means Ic has reached its maximum value(saturated).Product package TO-92S comes from the supplier.Collector Emitter Breakdown occurs at 25VV - Maximum voltage.
KSB811GBU Features
the DC current gain for this device is 200 @ 100mA 1V
the vce saturation(Max) is 500mV @ 100mA, 1A
the supplier device package of TO-92S
KSB811GBU Applications
There are a lot of ON Semiconductor
KSB811GBU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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