JANTXV2N4957UB

Manufacturer :

Microsemi

Product Category :

Transistors - Bipolar (BJT) - RF

Reference Standard :

MIL-19500/426

Pin Count :

3

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 5mA 10V

Current - Collector (Ic) (Max) :

30mA

Transistor Element Material :

SILICON

Transistor Type :

PNP

Power - Max :

200mW

Packaging :

Bulk

Voltage - Collector Emitter Breakdown (Max) :

30V

ECCN Code :

EAR99

Qualification Status :

Qualified

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lifecycle Status :

IN PRODUCTION (Last Updated: 6 months ago)

Operating Temperature :

-65°C~200°C TJ

Highest Frequency Band :

ULTRA HIGH FREQUENCY B

Package / Case :

3-SMD, No Lead

Number of Terminations :

3

JESD-30 Code :

R-CDSO-N3

Additional Feature :

LOW NOISE

JESD-609 Code :

e4

Transistor Application :

AMPLIFIER

Noise Figure (dB Typ @ f) :

3.5dB @ 450MHz

Polarity/Channel Type :

PNP

Terminal Position :

Dual

Configuration :

Single

Collector-Base Capacitance-Max :

0.8pF

RoHS Status :

Non-RoHS Compliant

Mounting Type :

Surface Mount

Number of Elements :

1

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

HTS Code :

8541.21.00.95

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Surface Mount :

yes

Gain :

25dB

Terminal Finish :

Gold (Au) - with Nickel (Ni) barrier