JANTXV2N4957

Manufacturer :

Microsemi

Product Category :

Transistors - Bipolar (BJT) - RF

Surface Mount :

No

Terminal Position :

BOTTOM

Transistor Application :

AMPLIFIER

Factory Lead Time :

23 Weeks

Noise Figure (dB Typ @ f) :

3.5dB @ 450MHz

Voltage - Collector Emitter Breakdown (Max) :

30V

ECCN Code :

EAR99

Pin Count :

4

Reference Standard :

MIL-19500/426

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lifecycle Status :

IN PRODUCTION (Last Updated: 6 months ago)

Collector-Base Capacitance-Max :

0.8pF

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Power - Max :

200mW

JESD-30 Code :

O-MBCY-W4

Operating Temperature :

-65°C~200°C TJ

Packaging :

Bulk

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 5mA 10V

HTS Code :

8541.21.00.95

JESD-609 Code :

e0

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Gain :

25dB

Number of Terminations :

4

Package / Case :

TO-72-3 Metal Can

Number of Elements :

1

Transistor Type :

PNP

Case Connection :

Isolated

Current - Collector (Ic) (Max) :

30mA

Terminal Form :

Wire

RoHS Status :

Non-RoHS Compliant

Highest Frequency Band :

ULTRA HIGH FREQUENCY B

Mounting Type :

Through Hole

Configuration :

Single

Terminal Finish :

Tin/Lead (Sn/Pb)

Polarity/Channel Type :

PNP

Qualification Status :

Qualified

Published :

2007