JANTX2N2857

Manufacturer :

Microsemi

Product Category :

Transistors - Bipolar (BJT) - RF

Gain :

12.5dB ~ 21dB @ 450MHz

Noise Figure (dB Typ @ f) :

4.5dB @ 450MHz

Factory Lead Time :

23 Weeks

Frequency - Transition :

500MHz

Number of Terminations :

4

Max Power Dissipation :

200mW

Contact Plating :

Lead, Tin

Radiation Hardening :

No

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 3mA 1V

Qualification Status :

Qualified

Published :

2007

Configuration :

Single

ECCN Code :

EAR99

JESD-609 Code :

e0

Series :

Military, MIL-PRF-19500/343

Emitter Base Voltage (VEBO) :

3V

Transistor Type :

NPN

Number of Elements :

1

Mount :

Through Hole

Collector Emitter Voltage (VCEO) :

15V

Frequency :

1.6GHz

RoHS Status :

Non-RoHS Compliant

Number of Pins :

4

Polarity/Channel Type :

NPN

Max Collector Current :

40mA

Packaging :

Bulk

Operating Temperature :

-65°C~200°C TJ

Mounting Type :

Through Hole

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

BOTTOM

Collector Base Voltage (VCBO) :

30V

Package / Case :

TO-72-3 Metal Can

Transistor Element Material :

SILICON

Power Dissipation :

200mW

Terminal Form :

Wire

Terminal Finish :

Tin/Lead (Sn/Pb)