IRLR9343TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Time@Peak Reflow Temperature-Max (s) :

30

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Element Configuration :

Single

Length :

6.7056mm

Input Capacitance (Ciss) (Max) @ Vds :

660pF @ 50V

Rise Time :

24ns

Gate to Source Voltage (Vgs) :

20V

Operating Mode :

ENHANCEMENT MODE

Mount :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JEDEC-95 Code :

TO-252AA

Drain to Source Voltage (Vdss) :

55V

Terminal Form :

Gull wing

Drain to Source Breakdown Voltage :

-55V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

JESD-30 Code :

R-PSSO-G2

Lead Free :

Lead Free

ECCN Code :

EAR99

Turn On Delay Time :

9.5 ns

Power Dissipation-Max :

79W Tc

Transistor Element Material :

SILICON

Number of Pins :

3

Current - Continuous Drain (Id) @ 25°C :

20A Tc

Operating Temperature :

-40°C~175°C TJ

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

1V @ 250μA

Radiation Hardening :

No

Height :

2.3876mm

Fall Time (Typ) :

9.5 ns

Power Dissipation :

79W

Factory Lead Time :

12 Weeks

Resistance :

93mOhm

JESD-609 Code :

e3

Rds On (Max) @ Id, Vgs :

105m Ω @ 3.4A, 10V

FET Type :

P-Channel

Transistor Application :

AMPLIFIER

Pulsed Drain Current-Max (IDM) :

60A

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Case Connection :

DRAIN

Number of Terminations :

2

Width :

6.22mm

Published :

2004

Peak Reflow Temperature (Cel) :

260

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Turn-Off Delay Time :

21 ns

Continuous Drain Current (ID) :

-20A

Gate Charge (Qg) (Max) @ Vgs :

47nC @ 10V

Series :

HEXFET®

Number of Elements :

1

RoHS Status :

ROHS3 Compliant