IRLR9343TRLPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Pins :

3

Series :

HEXFET®

Transistor Application :

AMPLIFIER

Drain to Source Voltage (Vdss) :

55V

ECCN Code :

EAR99

Pulsed Drain Current-Max (IDM) :

60A

Terminal Form :

Gull wing

Qualification Status :

Not Qualified

Power Dissipation-Max :

79W Tc

Mounting Type :

Surface Mount

FET Type :

P-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Operating Temperature :

175°C

Packaging :

Tape and Reel (TR)

Continuous Drain Current (ID) :

20A

JEDEC-95 Code :

TO-252AA

Mount :

Surface Mount

JESD-609 Code :

e3

JESD-30 Code :

R-PSSO-G2

Power Dissipation :

79W

Number of Elements :

1

Fall Time (Typ) :

9.5 ns

Published :

2004

RoHS Status :

ROHS3 Compliant

Turn On Delay Time :

9.5 ns

Contact Plating :

Tin

Configuration :

SINGLE WITH BUILT-IN DIODE

Rds On (Max) @ Id, Vgs :

105m Ω @ 3.4A, 10V

Case Connection :

DRAIN

Rise Time :

24ns

Current - Continuous Drain (Id) @ 25°C :

20A Tc

Operating Mode :

ENHANCEMENT MODE

Min Operating Temperature :

-40°C

Gate Charge (Qg) (Max) @ Vgs :

47nC @ 10V

Number of Terminations :

2

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Turn-Off Delay Time :

21 ns

DS Breakdown Voltage-Min :

55V

Gate to Source Voltage (Vgs) :

20V

Peak Reflow Temperature (Cel) :

260

Terminal Position :

Single

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

1V @ 250μA

Time@Peak Reflow Temperature-Max (s) :

30

Input Capacitance (Ciss) (Max) @ Vds :

660pF @ 50V