IRLR9343PBF

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-609 Code :

e3

Width :

6.22mm

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

REACH SVHC :

No SVHC

Terminal Finish :

MATTE TIN OVER NICKEL

Time@Peak Reflow Temperature-Max (s) :

30

Transistor Application :

AMPLIFIER

Vgs(th) (Max) @ Id :

1V @ 250μA

Threshold Voltage :

-1V

Gate Charge (Qg) (Max) @ Vgs :

47nC @ 10V

Length :

6.73mm

Mount :

Surface Mount

Element Configuration :

Single

FET Type :

P-Channel

Vgs (Max) :

±20V

Packaging :

Tube

RoHS Status :

ROHS3 Compliant

Rise Time :

24ns

Lead Free :

Lead Free

Peak Reflow Temperature (Cel) :

260

Mounting Type :

Surface Mount

Voltage - Rated DC :

-55V

Terminal Form :

Gull wing

Turn On Delay Time :

9.5 ns

Resistance :

105mOhm

Number of Terminations :

2

JEDEC-95 Code :

TO-252AA

Input Capacitance (Ciss) (Max) @ Vds :

660pF @ 50V

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

105m Ω @ 3.4A, 10V

Pulsed Drain Current-Max (IDM) :

60A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2004

JESD-30 Code :

R-PSSO-G2

Fall Time (Typ) :

9.5 ns

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

20A

Case Connection :

DRAIN

Drain to Source Breakdown Voltage :

-55V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Series :

HEXFET®

Current Rating :

-20A

Power Dissipation :

79W

Number of Pins :

3

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

20A Tc

Drain to Source Voltage (Vdss) :

55V

Radiation Hardening :

No

Turn-Off Delay Time :

21 ns

Power Dissipation-Max :

79W Tc

Height :

2.39mm

Operating Temperature :

-40°C~175°C TJ

ECCN Code :

EAR99

Gate to Source Voltage (Vgs) :

20V